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Raman spectrum of graphene and graphene layers.

TLDR
This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.
Abstract
Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality We show that its electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers The D peak second order changes in shape, width, and position for an increasing number of layers, reflecting the change in the electron bands via a double resonant Raman process The G peak slightly down-shifts This allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area

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Journal ArticleDOI

Graphene oxide (GO) enhanced polyamide (PA) thin-film nanocomposite (TFN) membrane for water purification

TL;DR: A thin-film nanocomposite (TFN) membrane containing graphene oxide (GO) nanosheets was prepared by the in-situ interfacial polymerization process as mentioned in this paper.
Journal ArticleDOI

Ultrafast hot-carrier-dominated photocurrent in graphene

TL;DR: Time-resolved scanning photocurrent microscopy is used to demonstrate that hot carriers, rather than phonons, dominate energy transport across a tunable graphene p-n junction excited by ultrafast laser pulses.
Journal ArticleDOI

Subjecting a Graphene Monolayer to Tension and Compression

TL;DR: In this paper, a cantilever-beam arrangement was used to examine the structural properties of graphene flakes under both tension and compression using two sets of samples, one consisting of flakes just supported on a plastic bar and the other consisting of flake embedded within the substrate.
Journal Article

Graphene-Silicon Schottky Diodes

TL;DR: In this article, the authors have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates, and the resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45eV on p-type Silicon at the room temperature.
Journal ArticleDOI

Sub 200 fs pulse generation from a graphene mode-locked fiber laser

TL;DR: In this paper, the authors reported the generation of 174 fs pulses from a graphene-based fiber laser for ultrafast spectroscopy with high temporal resolution, which is an ideal ultrawide-band saturable absorber.
References
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疟原虫var基因转换速率变化导致抗原变异[英]/Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

宁北芳, +1 more
TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
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