Journal ArticleDOI
Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
Navab Singh,K.D. Buddharaju,Sanjeev Kumar Manhas,Ajay Agarwal,S.C. Rustagi,Guo-Qiang Lo,N. Balasubramanian,Dim-Lee Kwong +7 more
TLDR
The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.Abstract:
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.read more
Citations
More filters
Journal ArticleDOI
Analyze the Tunneling Effect on Gate-All-Around Field Effect Transistor
Awanit Sharma,Shyam Akashe +1 more
TL;DR: In this paper, the gate controlled tunneling at source of gate-all-around field effect transistor is demonstrated and low leakage current (off current) is reported of 2.9uA with considerable power reduction Subthreshold Swing SS is achieved of 46.5 mV/dec.
DissertationDOI
ACCTuner: OpenACC Auto-Tuner For Accelerated Scientific Applications
TL;DR: This work optimize parameters in OpenACC clauses for a stencil evaluation kernel executed on Graphical Processing Units (GPUs) using a variety of machine learning and optimization search algorithms, individually and in hybrid combinations, and compares execution time performance to the best possible obtained from brute force search.
Dissertation
Vertical Integration of Germanium Nanowires on Silicon Substrates for Nanoelectronics.
TL;DR: In this paper, the vertical growth of vertical Ge nanowire on Si substrate has been studied and shown to be an Epitaxial growth of the ge nanowires.
Journal ArticleDOI
Analysis of Low Frequency Drain Current Model for Silicon Nanowire Gate-All-Around Field Effect Transistor
TL;DR: In this paper, the low frequency noise behavior in subthreshold regime of gate-all-around silicon nanowire field effect transistors was investigated and it was shown that noise is decreasing with frequency.
Proceedings ArticleDOI
A practical TEM sample preparation method for dopant profile delineation in vertical nanowire tunneling FETs
TL;DR: In this paper, a sample preparation technique for 2D dopant concentration profiling in silicon based devices is introduced, where selective chemical etching is shown in a series of tunneling field effect transistors (FETs).
References
More filters
Journal ArticleDOI
Cramming More Components Onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
Younan Xia,Peidong Yang,Yugang Sun,Yiying Wu,Brian Mayers,Byron D. Gates,Yadong Yin,Franklin Kim,Haoquan Yan +8 more
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Journal Article
Cramming More Components onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Multiplexed electrical detection of cancer markers with nanowire sensor arrays.
TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.