Journal ArticleDOI
Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
Navab Singh,K.D. Buddharaju,Sanjeev Kumar Manhas,Ajay Agarwal,S.C. Rustagi,Guo-Qiang Lo,N. Balasubramanian,Dim-Lee Kwong +7 more
TLDR
The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.Abstract:
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.read more
Citations
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Proceedings ArticleDOI
Effect of Various Parameter Variation on Analog/RF Performance of SiGe based Nanowire TFET
TL;DR: In this article , a new Semiconductor on Insulator (SOIGAA) nanowire has been come with up, studied, and simulated thoroughly and systematically using 2D numerical modeling in this study.
Performance verification of folded-cascode amplifiers built from nanowire transistors
TL;DR: In this paper, the plausibility of building analog amplifiers from nanowire transistors and verifies their performances was investigated. But the results showed that more work still needs to be done in this area, the results show a promising future in analog applications of nanowires transistors.
Proceedings ArticleDOI
TCAD-based performance analysis of nanoscale vacuum field-emission transistors at advanced technology nodes
TL;DR: In this article, the full fabrication process of nanoscale vacuum channel and gate-all-around nanowire transistors at the 45, 32 and 22 nm technology nodes was simulated in Silvaco TCAD.
Journal ArticleDOI
Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor
R. Behrle,Vanessa Krause,Michael S. Seifner,Benedikt Köstler,Kimberly A. Dick,Matthias Wagner,Masiar Sistani,Sven Barth +7 more
TL;DR: In this article , the electrical properties of the Si1−xGex/Au core-shell nanowires are compared to the Si 1−xGsex/Gex NWs after Au removal, while the purely semiconducting NWs show signatures of metal-like behavior.
References
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TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
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Journal Article
Cramming More Components onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Multiplexed electrical detection of cancer markers with nanowire sensor arrays.
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