Journal ArticleDOI
Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
Navab Singh,K.D. Buddharaju,Sanjeev Kumar Manhas,Ajay Agarwal,S.C. Rustagi,Guo-Qiang Lo,N. Balasubramanian,Dim-Lee Kwong +7 more
TLDR
The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.Abstract:
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.read more
Citations
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Journal ArticleDOI
Label-free and real-time detection of ferritin using a horn-like polycrystalline-silicon nanowire field-effect transistor biosensor
TL;DR: In this paper, a horn-like polycrystalline-silicon nanowire field effect transistor (poly-Si NW FET) was used to detect ferritin.
Journal ArticleDOI
Top-down fabrication of very-high density vertically stacked silicon nanowire arrays with low temperature budget
TL;DR: In this paper, a top-down complementary metal oxide semiconductor (CMOS) compatible fabrication method of ultra-high density Si nanowire (SiNW) arrays using a time multiplexed alternating process (TMAP) with low temperature budget is reported.
Journal ArticleDOI
Porous semiconductor compounds
TL;DR: In this article, a comparative analysis of the electrochemical dissolution of III-V (InP, GaAs, GaN), II-VI (ZnSe, CdSe) and SiC semiconductor compounds is presented.
Journal ArticleDOI
The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs
Elizabeth Buitrago,Montserrat Fernandez-Bolanos,Sara Rigante,Christian F. Zilch,Nicole S. Schröter,Adrian M. Nightingale,Adrian M. Ionescu +6 more
TL;DR: A 3D vertically stacked silicon nanowire (SiNW) and Fin field effect transistor (FET) has been successfully fabricated for the first time by a top-down, complementary metal oxide semiconductor (CMOS) compatible process on silicon on insulator (SOI) substrates for biosensing applications as discussed by the authors.
Journal ArticleDOI
Controlled growth of SiGe nanowires by addition of HCl in the gas phase
A. Potié,Thierry Baron,Laurence Latu-Romain,G. Rosaz,Bassem Salem,Laurent Montès,Pascal Gentile,Jens Kreisel,Hervé Roussel +8 more
TL;DR: In this article, a qualitative model based on the experimental results is proposed to explain the role of HCl during the growth of Si, Ge, and alloyed nanowires.
References
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Journal ArticleDOI
Cramming More Components Onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
Younan Xia,Peidong Yang,Yugang Sun,Yiying Wu,Brian Mayers,Byron D. Gates,Yadong Yin,Franklin Kim,Haoquan Yan +8 more
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Journal Article
Cramming More Components onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Multiplexed electrical detection of cancer markers with nanowire sensor arrays.
TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.