Journal ArticleDOI
Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
Navab Singh,K.D. Buddharaju,Sanjeev Kumar Manhas,Ajay Agarwal,S.C. Rustagi,Guo-Qiang Lo,N. Balasubramanian,Dim-Lee Kwong +7 more
TLDR
The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.Abstract:
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.read more
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Proceedings ArticleDOI
Uncoupled mode space approach towards transport modeling of Gate-All-Around In x Ga 1−x As nanowire MOSFET
Saeed Uz Zaman Khan,Md. Shafayat Hossain,Fahim ur Rahman,Rifat Zaman,Md. Obaidul Hossen,Quazi D. M. Khosru +5 more
TL;DR: In this paper, transport characterization of experimentally demonstrated gate-all-around (GAA) In x Ga 1−x As nanowire MOSFET in near-ballistic regime is performed using 3D selfconsistent Schrodinger-Poisson solver based on Uncoupled Mode Space approach, taking wave function penetration and other quantum mechanical effects into account The effects of channel length variation on transport characteristics are also examined
Journal ArticleDOI
Low-temperature plasma-assisted growth of germanium nanorods
Yu-Cian Wang,I-Chen Chen +1 more
TL;DR: In this article, the growth rate of germanium nanorods was investigated in electron cyclotron resonance (ECR) plasma with a GeH4-H2-CF4 system using indium nanocrystals as seed particles via the vapor-liquid-solid mechanism.
Proceedings ArticleDOI
Low resistive ALD TiN metal gate using TDMAT precursor for high performance MOSFET
T. Hayashida,Kazuhiko Endo,Y. X. Liu,T. Kamei,Takashi Matsukawa,Shin-ichi O'uchi,Kunihiro Sakamoto,Junichi Tsukada,Yuki Ishikawa,Hiromi Yamauchi,Atsushi Ogura,M. Masahara +11 more
TL;DR: In this article, the effect of the resistivity reduction of the ALD-TiN film using TDMAT precursor by modifying the NH 3 process (both initial exposure and PDA processes).
Journal ArticleDOI
Hole Transconductance of [100] Long-Channel Si Nanowire Transistor
TL;DR: In this article, hole transport characteristics of Si nanowire (NW) p-channel metal-oxide semiconductor with different lengths (2 μm, 5μm, 10 μm and 20 μm) were examined.
Carrier Transport Phenomena in Cylindrical Channel III-V Gate-All-Around Nanowire Transistor
TL;DR: In this paper, the electrostatics of a cylindrical channel III-V gate-all-around (GAA) FET along with transport study in the ballistic regime were investigated.
References
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Cramming More Components Onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
Younan Xia,Peidong Yang,Yugang Sun,Yiying Wu,Brian Mayers,Byron D. Gates,Yadong Yin,Franklin Kim,Haoquan Yan +8 more
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Journal Article
Cramming More Components onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Multiplexed electrical detection of cancer markers with nanowire sensor arrays.
TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.