Journal ArticleDOI
Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
Navab Singh,K.D. Buddharaju,Sanjeev Kumar Manhas,Ajay Agarwal,S.C. Rustagi,Guo-Qiang Lo,N. Balasubramanian,Dim-Lee Kwong +7 more
TLDR
The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.Abstract:
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.read more
Citations
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Journal ArticleDOI
Dual Material Pile Gate Approach for Low Leakage Finfet
S. S. Chopade,Dinesh Padole +1 more
TL;DR: In this article, a pile gate FinFET structure is proposed to reduce leakage current in the conventional bulk FinFet. But it does not use any pstop implant or oxide as in the Silicon-on-Insulator (SOI).
Band-to-Band Tunneling Transistors: Scalability and Circuit Performance
TL;DR: In this article, a TCAD analysis tool with dynamic nonlocal tunneling path determination is calibrated to experimental data, and an optimal source design for TFETs is found where a moderate doping concentration (~1019 cm-3) is found to be preferable to the higher doping concentrations more commonly used.
Journal ArticleDOI
Flexible silicon nanowire low-power ring oscillator featuring one-volt operation
TL;DR: In this article, a flexible silicon nanowire (SiNW) low-power ring oscillator, which features 1-V operation, is presented. But the authors do not specify the frequency of the oscillator.
Journal ArticleDOI
Sub-100nm Non-Planar 3D InGaAs MOSFETs: Fabrication and Characterization
Jiangjiang Gu,Peide D. Ye +1 more
TL;DR: In this article, the fabrication and characterization of various non-planar 3D InGaAs MOSFETs have been demonstrated and summarized, and the gate-all-around nanowire structure has been fabricated by a novel top-down approach for the first time and is found to offer great scalability down to at least 50nm channel length with good transport property.
Journal ArticleDOI
Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime
TL;DR: In this respect, Ge nanowires have shown their enormous potential for highly sensitive visible and near-infrared CMOS compatible photodetectors as mentioned in this paper, and they have been used in a wide range of applications.
References
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Journal ArticleDOI
Cramming More Components Onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
Younan Xia,Peidong Yang,Yugang Sun,Yiying Wu,Brian Mayers,Byron D. Gates,Yadong Yin,Franklin Kim,Haoquan Yan +8 more
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Journal Article
Cramming More Components onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Multiplexed electrical detection of cancer markers with nanowire sensor arrays.
TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.