Journal ArticleDOI
Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
Navab Singh,K.D. Buddharaju,Sanjeev Kumar Manhas,Ajay Agarwal,S.C. Rustagi,Guo-Qiang Lo,N. Balasubramanian,Dim-Lee Kwong +7 more
TLDR
The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.Abstract:
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.read more
Citations
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Proceedings ArticleDOI
Design aspects of carry lookahead adders with vertically-stacked nanowire transistors
TL;DR: The newly introduced vertically-stacked silicon nanowire gate-all-around field-effect-transistor technology and its advantages for higher density layout design and reduction in silicon active area occupancy are envisaged of great significance for regular cell mapping, in disruptive future applications based on nanowires transistor arrays.
Journal ArticleDOI
Selective Digital Etching of Silicon-Germanium Using Nitric and Hydrofluoric Acids.
Chen Li,Huilong Zhu,Huilong Zhu,Yongkui Zhang,Xiaogen Yin,Kunpeng Jia,Junjie Li,Guilei Wang,Zhenzhen Kong,Anyan Du,Tengzhi Yang,Liheng Zhao,Liheng Zhao,Weixing Huang,Lu Xie,Yangyang Li,Xuezheng Ai,Shishuai Ma,Henry H. Radamson +18 more
TL;DR: An oxidation model developed to describe the wet oxidation process with nitric acid can be used to analyze process variations and repeatability, and it can provide a credible guidance for the design of other wet digital etching experiments.
Journal ArticleDOI
Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels
Seonghyun Kim,Minseok Jo,Seungjae Jung,Hyejung Choi,Joonmyoung Lee,Man Chang,Chunhum Cho,Hyunsang Hwang +7 more
TL;DR: In this paper, the authors investigated the passivation effects of HPHA on silicon nanowire (Si NW) metal oxide semiconductor field effect transistors (MOSFETs) with multi-wire channels.
Proceedings ArticleDOI
6-T SRAM cell design with gate-all-around silicon nanowire MOSFETs
TL;DR: In this paper, a gate-all-around (GAA) silicon nanowire (NW) MOSFET was investigated via three-dimensional TCAD simulations and compact analytical modeling.
Patent
Contacts for nanowire field effect transistors
TL;DR: In this paper, a nanowire field effect transistor (FET) is defined as a FET with a channel region and a drain region, where the channel region is partially surrounded by a gate stack disposed circumferentially around the silicon portion.
References
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Journal ArticleDOI
Cramming More Components Onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
Younan Xia,Peidong Yang,Yugang Sun,Yiying Wu,Brian Mayers,Byron D. Gates,Yadong Yin,Franklin Kim,Haoquan Yan +8 more
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Journal Article
Cramming More Components onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Multiplexed electrical detection of cancer markers with nanowire sensor arrays.
TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.