Wavelength-size hybrid Si-VO(2) waveguide electroabsorption optical switches and photodetectors.
Arash Joushaghani,Junho Jeong,Suzanne Paradis,David Alain,J. Stewart Aitchison,Joyce K. S. Poon +5 more
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Ultra-compact waveguide electro absorption optical switches and photodetectors with micron- and sub-micron lengths and compatible with silicon (Si) waveguides are demonstrated using the insulator-metal phase transition of vanadium dioxide (VO(2).Abstract:
Ultra-compact waveguide electroabsorption optical switches and photodetectors with micron- and sub-micron lengths and compatible with silicon (Si) waveguides are demonstrated using the insulator-metal phase transition of vanadium dioxide (VO(2)). A 1 μm long hybrid Si-VO(2) device is shown to achieve a high extinction ratio of 12 dB and a competitive insertion loss of 5 dB over a broad bandwidth of 100 nm near λ = 1550 nm. The device, operated as a photodetector, can measure optical powers less than 1 μW with a responsivity in excess of 10 A/W. With volumes that are about 100 to 1000 times smaller than today's active Si photonic components, the hybrid Si-VO(2) devices show the feasibility of integrating transition metal oxides on Si photonic platforms for nanoscale electro-optic elements.read more
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The 2016 oxide electronic materials and oxide interfaces roadmap
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TL;DR: In this paper, the authors present a roadmap for oxide-based electronics with a focus on the necessary advances required to implement these materials, including both conventional and novel techniques for the synthesis, characterization, processing and fabrication of nanostructured oxides and oxide based devices.
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TL;DR: The Towards Oxide-Based Electronics (TO-BE) Action as mentioned in this paper has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries in a wide four-year project.
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Optically Monitored Electrical Switching in VO2
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Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation
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TL;DR: In this article, the basic optical properties of a sub-wavelength-dimension silicon ridge waveguide with a 20-nm-thick Ge2Sb2Te5 (GST) top-clad layer were studied.
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Plasmonic nanogap enhanced phase-change devices with dual electrical-optical functionality
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TL;DR: In this article, an integrated phase-change memory cell that can be electrically or optically switched between binary or multilevel states is presented. But it cannot be read out both optically and electrically, offering a new strategy for merging computing and communications technologies.
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