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Institution

National Physical Laboratory

FacilityLondon, United Kingdom
About: National Physical Laboratory is a facility organization based out in London, United Kingdom. It is known for research contribution in the topics: Dielectric & Thin film. The organization has 7615 authors who have published 13327 publications receiving 319381 citations.


Papers
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Journal ArticleDOI
TL;DR: The results of photo-response studies carried out on HRP/NanoCeO(2)/ITO bioelectrode indicate reasonable agreement with those obtained using amperometric technique.

137 citations

Journal ArticleDOI
TL;DR: In this paper, the X-ray diffraction spectra obtained from single crystals of an alloy of aluminium with 4% by weight of copper were used to investigate the properties of age-hardening exhibited by these alloys, in the hope that some light would be reflected on the processes preceding precipitation of the compound CuAl2.
Abstract: The object of this paper is to draw attention to certain peculiarities in the X-ray diffraction spectra obtained from single crystals of an alloy of aluminium with 4% by weight of copper. The experiments described below were carried out during an investigation into the property of age-hardening exhibited by these alloys, in the hope that some light would be throuwn on the processes preceding precipitation of the compound CuAl2, which are generally regarded as being the cause of the hardening in alloys of the Duralumin class, of which the simple 4% copper alloy is the prototype. The material used in the investigation was prepared from aluminium of high purity and after casting the ingots were forged and then draws into wires of 1 mm. diameter. Pieces of the wire after annealing at 500° C. contained crystals of sufficient size (2-5 mm. in length) for X-ray examination by the oscillating crystal and Laue methods.

136 citations

Journal ArticleDOI
TL;DR: A framework for MR sensor technology (non-recording applications) to be used for public and private R&D planning, in order to provide guidance into likely MR sensor applications, products, and services expected in the next 15 years and beyond.
Abstract: Magnetoresistive (MR) sensors have been identified as promising candidates for the development of high-performance magnetometers due to their high sensitivity, low cost, low power consumption, and small size. The rapid advance of MR sensor technology has opened up a variety of MR sensor applications. These applications are in different areas that require MR sensors with different properties. Future MR sensor development in each of these areas requires an overview and a strategic guide. An MR sensor roadmap (non-recording applications) was therefore developed and made public by the Technical Committee of the IEEE Magnetics Society with the aim to provide an research and development (R&D) guide for MR sensors intended to be used by industry, government, and academia. The roadmap was developed over a three-year period and coordinated by an international effort of 22 taskforce members from ten countries and 17 organizations, including universities, research institutes, and sensor companies. In this paper, the current status of MR sensors for non-recording applications was identified by analyzing the patent and publication statistics. As a result, timescales for MR sensor development were established and critical milestones for sensor parameters were extracted in order to gain insight into potential MR sensor applications (non-recording). Five application areas were identified, and five MR sensor roadmaps were established. These include biomedical applications, flexible electronics, position sensing and human–computer interactions, non-destructive evaluation and monitoring, and navigation and transportation. Each roadmap was analyzed using a logistic growth model, and new opportunities were predicted based on the extrapolated curve, forecast milestones, and professional judgment of the taskforce members. This paper provides a framework for MR sensor technology (non-recording applications) to be used for public and private R&D planning, in order to provide guidance into likely MR sensor applications, products, and services expected in the next 15 years and beyond.

136 citations

Journal ArticleDOI
TL;DR: By selectively oxidizing the backside of the Cu foil prior to graphene growth, a drastic reduction of the graphene nucleation density can be obtained, allowing for the scavenging effect of oxygen on deleterious carbon impurities as it permeates through the Cu bulk.
Abstract: The mechanism by which Cu catalyst pretreatments control graphene nucleation density in scalable chemical vapor deposition (CVD) is systematically explored. The intrinsic and extrinsic carbon contamination in the Cu foil is identified by time-of-flight secondary ion mass spectrometry as a major factor influencing graphene nucleation and growth. By selectively oxidizing the backside of the Cu foil prior to graphene growth, a drastic reduction of the graphene nucleation density by 6 orders of magnitude can be obtained. This approach decouples surface roughness effects and at the same time allows us to trace the scavenging effect of oxygen on deleterious carbon impurities as it permeates through the Cu bulk. Parallels to well-known processes in Cu metallurgy are discussed. We also put into context the relative effectiveness and underlying mechanisms of the most widely used Cu pretreatments, including wet etching and electropolishing, allowing a rationalization of current literature and determination of the relevant parameter space for graphene growth. Taking into account the wider CVD growth parameter space, guidelines are discussed for high-throughput manufacturing of "electronic-quality" monolayer graphene films with domain size exceeding 1 mm, suitable for emerging industrial applications, such as electronics and photonics.

136 citations

Journal ArticleDOI
TL;DR: In this paper, a chemical co-precipitation method was used to synthesize single crystalline Ni x Zn 1− x Fe 2 O 4 nanoparticles using X-ray diffraction, Fourier transform infrared spectroscopy, electron paramagnetic resonance and dc magnetization.

136 citations


Authors

Showing all 7655 results

NameH-indexPapersCitations
Rajesh Kumar1494439140830
Akhilesh Pandey10052953741
A. S. Bell9030561177
David R. Clarke9055336039
Praveen Kumar88133935718
Richard C. Thompson8738045702
Xin-She Yang8544461136
Andrew J. Pollard7967326295
Krishnendu Chakrabarty7999627583
Vinod Kumar7781526882
Bansi D. Malhotra7537519419
Matthew Hall7582724352
Sanjay K. Srivastava7336615587
Michael Jones7233118889
Sanjay Singh71113322099
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202315
202242
2021356
2020438
2019434
2018406