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An Introduction to Spin Wave Computing

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TLDR
It is argued that spin-wave circuits need to be embedded in conventional CMOS circuits to obtain complete functional hybrid computing systems and the benchmark indicates that hybridspin-wave--CMOS systems promise ultralow-power operation and may ultimately outperform conventionalCMOS circuits in terms of the power-delay-area product.
Abstract
This paper provides a tutorial overview over recent vigorous efforts to develop computing systems based on spin waves instead of charges and voltages Spin-wave computing can be considered as a subfield of spintronics, which uses magnetic excitations for computation and memory applications The tutorial combines backgrounds in spin-wave and device physics as well as circuit engineering to create synergies between the physics and electrical engineering communities to advance the field towards practical spin-wave circuits After an introduction to magnetic interactions and spin-wave physics, all relevant basic aspects of spin-wave computing and individual spin-wave devices are reviewed The focus is on spin-wave majority gates as they are the most prominently pursued device concept Subsequently, we discuss the current status and the challenges to combine spin-wave gates and obtain circuits and ultimately computing systems, considering essential aspects such as gate interconnection, logic level restoration, input-output consistency, and fan-out achievement We argue that spin-wave circuits need to be embedded in conventional CMOS circuits to obtain complete functional hybrid computing systems The state of the art of benchmarking such hybrid spin-wave--CMOS systems is reviewed and the current challenges to realize such systems are discussed The benchmark indicates that hybrid spin-wave--CMOS systems promise ultralow-power operation and may ultimately outperform conventional CMOS circuits in terms of the power-delay-area product Current challenges to achieve this goal include low-power signal restoration in spin-wave circuits as well as efficient spin-wave transducers

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References
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Journal ArticleDOI

Current-induced spin orientation of electrons in semiconductors

TL;DR: In this paper, an electrical current in a semiconductor induces spin orientation in a thin layer near the surface of the sample due to spin-orbit effects in scattering of electrons, and a weak magnetic field parallel to the current destroys this orientation.
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Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

TL;DR: Simulations confirm that voltage-controlled magnetization switching in magnetic tunnel junctions is possible using the anisotropy change demonstrated here, which could be of use in the development of low-power logic devices and non-volatile memory cells.
Journal ArticleDOI

Magnetic anisotropy in metallic multilayers

TL;DR: In this paper, a comprehensive survey of experimental studies on the magnetic anisotropy in metallic multilayers containing Fe, Co or Ni is presented and commented on, with the help of some dedicated experimental studies.
Journal ArticleDOI

The 2017 terahertz science and technology roadmap

TL;DR: The 2017 roadmap of terahertz frequency electromagnetic radiation (100 GHz-30 THz) as discussed by the authors provides a snapshot of the present state of THz science and technology in 2017, and provides an opinion on the challenges and opportunities that the future holds.
Journal ArticleDOI

Electric Field-Induced Modification of Magnetism in Thin-Film Ferromagnets

TL;DR: It is demonstrated that the magnetocrystalline anisotropy of ordered iron-platinum and iron-palladium intermetallic compounds can be reversibly modified by an applied electric field when immersed in an electrolyte.
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