Development of Radiation Hard ${\rm N}^{+}$ -on-P Silicon Microstrip Sensors for Super LHC
K. Hara,K. Inoue,A. Mochizuki,T. Meguro,H. Hatano,Yoichi Ikegami,T. Kohriki,Susumu Terada,Yoshinobu Unno,Kazuhisa Yamamura,S. Kamata +10 more
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In this article, a non-inverting n+-on-p sensor was used at the Super LHC experiment to measure the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.Abstract:
Radiation tolerance up to 1015 1-MeV neq/cm2 is required for the silicon microstrip sensors to be operated at the Super LHC experiment. As a candidate for such sensors, we are investigating non-inverting n+-on-p sensors. We manufactured sample sensors of 1 times 1 cm in 4" and 6" processes with implementing different interstrip electrical isolation structures. Industrial high resistive p-type wafers from FZ and MCZ growth are tested. They are different in crystal orientations lang100rang and lang111rang with different wafer resistivities. The sensors were irradiated with 70-MeV protons and characterized in views of the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.read more
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Journal ArticleDOI
Development of n-on-p silicon sensors for very high radiation environments
Yoshinobu Unno,A. A. Affolder,Phillip Allport,Richard Bates,C. Betancourt,J. Bohm,H. Brown,Craig Buttar,J. R. Carter,Gianluigi Casse,H. S. Chen,A. Chilingarov,Vladimir Cindro,A. G. Clark,Noel Dawson,B. DeWilde,Zdenek Dolezal,Lars Eklund,Vitaliy Fadeyev,Didier Ferrere,Harald Fox,Richard French,Carmen García,M. Gerling,S. Gonzalez Sevilla,I. V. Gorelov,A. Greenall,Alexander Grillo,N. Hamasaki,Kazuhiko Hara,H. Hatano,Martin Hoeferkamp,L.B.A. Hommels,Yoichi Ikegami,Karl Jakobs,S. Kamada,J.A. Kierstead,Peter Kodys,M. Köhler,T. Kohriki,Gregor Kramberger,Carlos Lacasta,Z. Li,S. Lindgren,David Lynn,Marcela Mikestikova,P. Maddock,Igor Mandić,S. Marti i Garcia,F. Martinez-Mckinney,R. Maunu,R. L. McCarthy,Jessica Metcalfe,Marko Mikuz,M. Miñano,S. Mitsui,Val O'Shea,S. Paganis,U. Parzefall,D. Puldon,Dave Robinson,Hartmut Sadrozinski,S. Sattari,D. Schamberger,Sally Seidel,Abraham Seiden,Susumu Terada,Konstantin Toms,D. Tsionou,J. Von Wilpert,M. Wormald,J. Wright,M. Yamada,Kazuhisa Yamamura +73 more
TL;DR: In this article, the authors developed a highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider.
Journal ArticleDOI
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
Kazuhiko Hara,A. A. Affolder,Phillip Allport,Richard Bates,C. Betancourt,J. Bohm,H. Brown,Craig Buttar,J. R. Carter,Gianluigi Casse,H. S. Chen,A. Chilingarov,Vladimir Cindro,A. G. Clark,Noel Dawson,B. DeWilde,F. Doherty,Zdenek Dolezal,Lars Eklund,Vitaliy Fadeyev,Didier Ferrere,Harald Fox,Richard French,Carmen García,M. Gerling,S. Gonzalez Sevilla,I. V. Gorelov,A. Greenall,Alexander Grillo,N. Hamasaki,H. Hatano,Martin Hoeferkamp,L.B.A. Hommels,Yoichi Ikegami,Karl Jakobs,J.A. Kierstead,Peter Kodys,M. Köhler,T. Kohriki,Gregor Kramberger,Carlos Lacasta,Z. Li,S. Lindgren,David Lynn,P. Maddock,Igor Mandić,F. Martinez-McKinney,S. Marti i Garcia,R. Maunu,R. L. McCarthy,Jessica Metcalfe,Marcela Mikestikova,M. Mikuž,M. Miñano,S. Mitsui,Val O'Shea,U. Parzefall,Hartmut Sadrozinski,D. Schamberger,A. Seiden,Susumu Terada,S. Paganis,Dave Robinson,D. Puldon,S. Sattari,Sally Seidel,Y. Takahashi,Konstantin Toms,D. Tsionou,Yoshinobu Unno,J. Von Wilpert,M. Wormald,J. Wright,M. Yamada +73 more
TL;DR: In this article, the authors developed n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility.
Journal ArticleDOI
Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment
S. Lindgren,A. A. Affolder,Phillip Allport,Richard Bates,C. Betancourt,J. Bohm,H. Brown,Craig Buttar,J. R. Carter,Gianluigi Casse,H. S. Chen,A. Chilingarov,Vladimir Cindro,A. G. Clark,Noel Dawson,B. DeWilde,F. Doherty,Zdenek Dolezal,Lars Eklund,Vitaliy Fadeyev,D. Ferrèrre,Harald Fox,Richard French,Carmen García,M. Gerling,S. Gonzalez Sevilla,I. V. Gorelov,A. Greenall,Alexander Grillo,N. Hamasaki,Kazuhiko Hara,H. Hatano,Martin Hoeferkamp,L.B.A. Hommels,Yoichi Ikegami,Karl Jakobs,J.A. Kierstead,Peter Kodys,M. Köhler,T. Kohriki,Gregor Kramberger,Carlos Lacasta,Z. Li,David Lynn,P. Maddock,Igor Mandić,F. Martinez-McKinney,S.Martíi Garcia,R. Maunu,R. L. McCarthy,Jessica Metcalfe,Marcela Mikestikova,M. Mikuž,M. Miñano,S. Mitsui,Val O'Shea,U. Parzefall,Hartmut Sadrozinski,D. Schamberger,A. Seiden,Susumu Terada,S. Paganis,Dave Robinson,D. Puldon,S. Sattari,Sally Seidel,Konstantin Toms,D. Tsionou,Yoshinobu Unno,J. Von Wilpert,M. Wormald,J. Wright,M. Yamada +72 more
TL;DR: In this paper, the authors developed n+inp, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment.
Journal ArticleDOI
TCT measurements of irradiated strip detectors with a focused laser beam
Igor Mandić,Vladimir Cindro,Andrej Gorišek,Gregor Kramberger,Marko Mikuž,Marko Mikuž,M Milovanović,M. Zavrtanik +7 more
TL;DR: In this article, electrical signals induced by pulses of a focused IR (λ = 1064 nm) laser beam in strip detectors were measured using a wide bandwidth current amplifier, where the laser beam was focused to a spot with a diameter of about 8 μm and directed to the detector surface.
Journal ArticleDOI
Accelerated annealing of n + -p strip detectors irradiated with pions
Igor Mandić,Vladimir Cindro,Andrej Gorišek,Gregor Kramberger,Marko Mikuž,Marko Mikuž,M Milovanović,M. Zavrtanik +7 more
TL;DR: In this article, the authors presented charge collection measurements with silicon detectors with implanted n-type readout strips in p-type silicon bulk (n+p) and observed that irradiation of these detectors with pions results in only ~ 30% of the increase of VFD seen after irradiation with neutrons to the same NIEL equivalent fluence.
References
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TL;DR: In this article, the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC) are discussed, together with the qualification and quality assurance procedures adopted for their production.
Journal ArticleDOI
Radiation-hard semiconductor detectors for SuperLHC
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TL;DR: The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors are reviewed and discussed in this work as mentioned in this paper, which includes the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors.
Journal ArticleDOI
First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
TL;DR: The n-side read out has been successfully used in combination with oxygen-enriched n-type silicon substrate to maximise the radiation hardness of microstrip detectors in this article.
Journal ArticleDOI
Proton irradiation on p-bulk silicon strip detectors using 12 GeV PS at KEK
Susumu Terada,H. Iwasaki,T. Kohriki,T. Kondo,Masaharu Numajiri,Y. Unno,T. Handa,Y. Iwata,T. Ohsugi,N. Tamura,Ryuichi Takashima +10 more
TL;DR: In this article, p-bulk n-strip silicon strip detectors were irradiated with a 12 GeV proton beam at the KEK Proton Synchrotron in order to investigate a radiation damage due to high fluence of high energy protons.
Journal ArticleDOI
Technology development of p-type microstrip detectors with radiation hard p-spray isolation
Giulio Pellegrini,Celeste Fleta,Francesca Campabadal,S. Diez,Manuel Lozano,Joan Marc Rafi,Miguel Ullan +6 more
TL;DR: In this paper, the p-spray implant isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation.