Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Book ChapterDOI
11 - Strain engineering of silicon–germanium (SiGe) micro- and nanostructures
TL;DR: In this article, the authors provide an overview of strain-engineered heterostructures and quantum devices based on SiGe alloys, including fast field-effect transistors and energy harvesting devices.
Book ChapterDOI
Device Applications of Quantum Dots
TL;DR: In quantum nanostructures like quantum wires or quantum dots, where electrons are two- or three-dimensionalally confined into nanometer-scale semiconductor structures, novel physical properties are expected to emerge.
Journal ArticleDOI
Surface diffusion coefficient determination by uniaxial tensile strain in Pb/Cu(111) surface systems
TL;DR: In this paper, the surface diffusion energy barrier of Pb adatoms on uniaxially strained Cu(111) was investigated using molecular dynamics simulations and ab initio calculations methods.
Journal ArticleDOI
Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001)
Michel Gendry,G. Hollinger +1 more
TL;DR: In this article, the authors investigated the 2D/3D growth mode transition of 2% compressive and tensile strained InGaAs on InP(0,0,1) using scanning tunneling microscopy measurements.
Journal ArticleDOI
Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition
P.M. Lytvyn,Yu. I. Mazur,Euclydes Marega,Vitaliy G. Dorogan,V. P. Kladko,M. V. Slobodian,V. V. Strelchuk,M. L. Hussein,Morgan E. Ware,Gregory J. Salamo +9 more
TL;DR: It is shown experimentally that using As(2) molecules instead of As(4) as a background flux is efficient in controlling the diffusion of distant Ga adatoms to make it possible to produce isotropic ordering of InGaAs QDs over GaAs (001).