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Self-organization in growth of quantum dot superlattices.

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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

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Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

TL;DR: In this paper, multiple-layer stacked GaN quantum dots with intense photoluminescence (PL) have been successfully grown by the Stranski-Krastanow growth mode in metalorganic chemical vapor deposition.
Journal ArticleDOI

First-principles calculation of the effect of strain on the diffusion of Ge adatoms on Si and Ge(001) surfaces

TL;DR: In this paper, the strain dependencies of the binding and diffusion activation energies for Ge adatoms on both Si(001) and Ge (001) surfaces were calculated and shown to give rise to a 16-fold increase in adatom density and a fivefold decrease in diffusion diffusivity in the region of compressive strain surrounding a Ge island.
Journal ArticleDOI

Effect of elastic anisotropy on the elastic fields and vertical alignment of quantum dots

TL;DR: In this paper, the effect of elastic anisotropy of the materials with the anisotropic ratio A ranging from 0.25 to 4.0 for both the QDs and the matrix was investigated.
Journal ArticleDOI

Storage of electrons and holes in self-assembled InAs quantum dots

TL;DR: In this article, the authors report spectroscopic measurements of charge-tunable quantum dots and show how to accumulate holes in the dots by illuminating the samples with below band gap radiation when a large negative bias is applied.
Journal ArticleDOI

The Control on Size and Density of InAs QDs by Droplet Epitaxy (April 2009)

TL;DR: In this paper, the size and density of InAs quantum dots (QDs) are controlled by droplet epitaxy using solid-source molecular beam epitaxy (MBE).
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