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Journal ArticleDOI

Self-organization in growth of quantum dot superlattices.

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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

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Journal ArticleDOI

Metalorganic chemical vapour deposition of GaSb quantum dots on germanium

TL;DR: The average density of these islands across the surface was 4×108 cm−2 for 30 s or 60 monolayers of deposition for longer growth times, these islands coalesced as three-dimensional growth became dominant.
Book ChapterDOI

Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots

TL;DR: In this paper, a GaAs matrix is embedded in quantum dots, which can be used for low-threshold room-temperature laser devices with discrete atom-like energy levels.
Journal ArticleDOI

Formation and local electronic structure of Ge clusters on Si(111)-7×7 surfaces

TL;DR: In this paper, the formation and local electronic structure of Ge clusters on the Si(111)-7 x 7 surface studied by using variable temperature scanning tunnelling microscopy (VT-STM) and low-temperature scanning spectroscopy (STS).
Journal ArticleDOI

Size filtering effect in vertical stacks of In(Ga)As/GaAs self-assembled quantum rings

TL;DR: In this paper, a systematic study of closely In(Ga)As/InAs quantum rings (QRs) grown by molecular beam epitaxy (MBE) is presented, which show a strong filtering effect in the ring being stacked and simultaneous linewidth narrowing for the appropriate layer thickness.
Journal ArticleDOI

MBE growth and structural characterization of Sic/SiGe superlattices

TL;DR: In this article, the MBE growth and X-ray characterization of Si 1-y C y /Si 1-x Ge x superlattices (SLs) were reported.
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