Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
Citations
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Journal ArticleDOI
Distinct growth behaviours in molecular-beam epitaxy of (In,Ga)As on GaAs(311)A substrate
Journal ArticleDOI
Ordering of nanostructures in a Si/Ge0.3Si0.7/Ge system during molecular beam epitaxy
TL;DR: The structural properties of nanoobjects in a heteroepitaxial Si/Ge 0.3Si0.7/Ge system have been studied using atomic-force microscopy.
Journal ArticleDOI
Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures
TL;DR: In this paper, a GaAs/GaAs quantum dots (QDs) superlattice grown by molecular beam epitaxy (MBE) at different substrate temperatures for fabricating 8-12 μm infrared photodetector were characterized by transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD), and photoluminescence (PL).
Journal ArticleDOI
Role of the wetting layer for the SiGe Stranski?Krastanow island growth on planar and pit-patterned substrates
TL;DR: In this paper, the homogeneity and thickness of a ge wetting layer on planar and pit-patterned Si(0?0?1) substrates were investigated using a combination of atomic force microscopy and selective chemical etching.
Book ChapterDOI
Molecular Beam Epitaxy: An Overview
TL;DR: In this paper, the main features of the MBE are reviewed and it is shown how the knowledge of kinetic growth mechanisms gives a great confidence in the design and preparation of structures with innovative engineered properties.