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Journal ArticleDOI

Self-organization in growth of quantum dot superlattices.

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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

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Journal ArticleDOI

Ordering of nanostructures in a Si/Ge0.3Si0.7/Ge system during molecular beam epitaxy

TL;DR: The structural properties of nanoobjects in a heteroepitaxial Si/Ge 0.3Si0.7/Ge system have been studied using atomic-force microscopy.
Journal ArticleDOI

Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

TL;DR: In this paper, a GaAs/GaAs quantum dots (QDs) superlattice grown by molecular beam epitaxy (MBE) at different substrate temperatures for fabricating 8-12 μm infrared photodetector were characterized by transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD), and photoluminescence (PL).
Journal ArticleDOI

Role of the wetting layer for the SiGe Stranski?Krastanow island growth on planar and pit-patterned substrates

TL;DR: In this paper, the homogeneity and thickness of a ge wetting layer on planar and pit-patterned Si(0?0?1) substrates were investigated using a combination of atomic force microscopy and selective chemical etching.
Book ChapterDOI

Molecular Beam Epitaxy: An Overview

TL;DR: In this paper, the main features of the MBE are reviewed and it is shown how the knowledge of kinetic growth mechanisms gives a great confidence in the design and preparation of structures with innovative engineered properties.
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