Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Isolated and close-packed In0.4Ga0.6As/GaAs (311)B quantum dots
TL;DR: In this article, different characteristics were found on isolated and close-packed self-assembled In 0.4 Ga 0.6 As/GaAs (311)B quantum dots (QDs).
Journal ArticleDOI
Structure transition of Ge/Si(1 1 3) surfaces during Ge epitaxial growth
TL;DR: In this paper, it was observed that a Ge wetting layer on Si(1.1.3)-3×3 layers changes its surface structure from an initial Si( 1.1/3)- 3×2 layer to Ge/Si( 1/3/2)-2×2 layers for a few-ML epitaxial growth.
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Vertical self-organization of Ge1−xMnx nanocolumn multilayers grown on Ge(001) substrates
Thi Giang Le,Minh Tuan Dau +1 more
TL;DR: In this paper, a simplified 2D model based on the theory of elastic constant interactions has been used to provide reasonable explanations to the vertical self-organization of GeMn nanocolumns in multilayers.
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The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate
Z.Z Sun,Ju Wu,F. Lin,Fengqi Liu,Yonghai Chen,Xiaoling Ye,Weihong Jiang,Y.F Li,Bo Xu,Zhanguo Wang +9 more
TL;DR: In this paper, a self-organized InAs/In0.53Ga0.47As quantum dot (QD) multilayers were grown on InP substrate by molecular beam epitaxy.
Self-organization of steps and domain boundaries of 7×7 reconstruction on Si(111)
TL;DR: In this paper, the authors describe three different aspects of the self-organization of steps and domain boundaries of a 7×7 reconstruction on SI(111) surfaces, including the formation of a triangular-tiled pattern of 1 × 1 and 7 × 7 domains during the phase transition.