Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Fabrication of SiGe quantum dots : a new approach based on selective growth on chemically prepared H-passivated Si(100) surfaces
TL;DR: In this article, a new method to produce SiGe quantum dots on Si(100) surfaces was proposed, based on the fact that the adsorption of hydride molecules (SiH4, GeH4) requires free sites on the surface.
Journal ArticleDOI
Quantum dot solar cell: Materials that produce two intermediate bands
Steven Jenks,Robert Gilmore +1 more
TL;DR: In this article, the theoretical efficiency of placing intermediate bands within the energy gap of a semiconductor has been investigated as a way to increase solar cell efficiency, and the sensitivity of the efficiency as a function of the intermediate band energy levels is investigated.
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Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots
Stefano Sanguinetti,M. Padovani,Massimo Gurioli,Emanuele Grilli,Mario Guzzi,Anna Vinattieri,Marcello Colocci,Paola Frigeri,S. Franchi +8 more
TL;DR: In this paper, a detailed study of the carrier transfer and photoluminescence quenching in stacked InAs/GaAs quantum dots (QDs) is presented, with different numbers N of dot planes and different spacer thicknesses (d).
Journal ArticleDOI
Formation and ordering effects of C-induced Ge dots grown on Si (001) by molecular beam epitaxy
TL;DR: In this paper, the authors studied the nucleation of these Ge dots on Si and the ordering of these dots in stacks of dot layers by in-situ scanning tunneling microscopy (STM) and transmission electron microscopy.
Journal ArticleDOI
Donor-impurity-related optical absorption and refractive index changes in GaAs/AlGaAs core/shell spherical quantum dots
TL;DR: In this paper, the linear and nonlinear intersubband optical absorption coefficients (OACs) and refractive index changes (RICs) in GaAs/AlGaAs core/shell spherical quantum dots (QDs) are theoretically investigated within the framework of the compact-density-matrix approach and iterative method for both cases with and without on-center impurity.