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Self-organization in growth of quantum dot superlattices.

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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

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Journal ArticleDOI

Ordering and shape of self-assembled InAs quantum dots on GaAs(001)

TL;DR: In this article, the mean-dot-dot distance and correlation lengths of the dot lateral distribution are found to be anisotropic, indicating a lateral ordering in the spatial positions of the InAs QDs.
Journal ArticleDOI

Three-dimensional stacking of self-assembled quantum dots in multilayer structures

TL;DR: Springholz et al. as mentioned in this paper proposed three-dimensional stacking of semiconductor nano-islands in multilayers or superlattice structures provides a powerful tool for controlling the properties of self-assembled quantum dots.
Journal ArticleDOI

Strain relaxation in stacked InAs/GaAs quantum dots studied by Raman scattering

TL;DR: In this paper, a Raman scattering investigation of InAs vibrational modes in multiple layers of self-assembled quantum dots in a GaAs matrix is reported. And the authors estimate the magnitude of the strain in the quantum dot layers, which relate to the energy of the photoluminescence emission of the dots.
Journal ArticleDOI

Self-assembled periodical polycrystalline-ZnO/a-C nanolayers on Zn nanowire.

TL;DR: A systematic study to clarify the self-formation mechanism of the periodical multilayers outside the Zn nanowire found out that such a configuration originated from a chemical reaction between Zn and CO2 and were formed via a gas phase diffusion-interfacial chemical reaction-phase separation process.
Journal ArticleDOI

The influence of deposition temperature on the correlation of Ge quantum dot positions in amorphous silica matrix

TL;DR: It is demonstrated that the degree of the spatial correlation of quantum dots influences the size distribution width, which further affects the macroscopic properties of the quantum dot arrays.
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