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Journal ArticleDOI

Self-organization in growth of quantum dot superlattices.

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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

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Citations
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Journal ArticleDOI

Structures with vertically stacked Ge/Si quantum dots for logical operations

TL;DR: In this paper, the spatial distributions of the strain energy density and electron potential energy are calculated for different valleys forming the bottom of the silicon conduction band, and it is shown that the development of multilayer structures with vertically stacked quantum dots makes it possible to fabricate deep potential wells for electrons with vertical tunnel coupling.
Journal ArticleDOI

Atomic Force Microscopy and Transmission Electron Microscopy Study of Self-Organized Ordering in Vertically Aligned PbSe Quantum Dot Superlattices

TL;DR: In this article, self-organized lateral ordering was studied for PbSe/Pb 1-x Eu x Te quantum dot superlattices as a function of spacer thickness using atomic force microscopy and transmission electron microscopy.
Journal ArticleDOI

Vibrational modes and strain in GaN/AlN quantum dot stacks: dependence on spacer thickness

TL;DR: In this article, the influence of spacer thickness on the vibrational and strain characteristics of GaN/AlN quantum dot multilayers was investigated, and it was shown that there is a rapid blue shift of the GaN vibrational mode with spacer width when its value is smaller than 7 nm while it remains almost constant for thicker spacers.
Journal ArticleDOI

Pontos quânticos: átomos artificiais e transistores atômicos

TL;DR: O argumentacao simples e desenvolvida no sentido de mostrar algumas particularidades e aplicacoes dos pontos quânticos.
Book ChapterDOI

Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method

TL;DR: In this article, the InAs self-assembled quantum wires (QWr) grown by solid source molecular beam epitaxy on InP (001) substrates have been studied by both transmission electron microscopy (TEM) and high resolution transmission electron microscope (HRTEM).
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