Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Quantum dot opto-electronic devices
TL;DR: In this article, a self-organized In(Ga)As/GaAs quantum box is grown by molecular beam expitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) on GaAs, InP, and other substrates and is incorporated in microelectronic and opto-electronic devices.
Journal ArticleDOI
Growth kinetics and optical properties of self-organized GaN quantum dots
TL;DR: In this article, it was shown that the luminescence peak of GaN dots is blueshifted with respect to bulk emission and its intensity does not vary with temperature, both effects demonstrating the strongly zero-dimensional character of these nanostructures.
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Self-organized growth of quantum-dot structures
TL;DR: In this paper, a review of the current developments in the field of self-assembled semiconductor quantum-dot structures during epitaxial growth of lattice mismatched systems is presented.
Journal ArticleDOI
Growth and self-organization of SiGe nanostructures
TL;DR: In this article, the authors present a review of theoretical concepts and experimental results on the spontaneous formation and self-organization of SiGe quantum dots on silicon substrates, including morphological, structural and compositional properties.
Journal ArticleDOI
Advanced quantum dot configurations
TL;DR: In this paper, the authors present an overview on approaches currently employed to fabricate advanced quantum dot configurations by epitaxial growth, and discuss a promising approach to realize quantum dot crystals with controlled spatial and optical properties.