Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics
TL;DR: In this article, the authors demonstrate self-alignment of epitaxial Ag nanocrystals on top of low-density near-surface InAs quantum dots (QDs) grown by molecular beam epitaxy.
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Fluorine etching on the Si(1 1 1)-7 × 7 surfaces using fluorinated fullerene
Yasunori Fujikawa,Jerzy T. Sadowski,Kevin F. Kelly,Kosuke Nakayama,Tadaaki Nagao,Takemaro Sakurai +5 more
TL;DR: In this article, the fluorine diffusion process was found to be an elemental process in the etching because the diffusion of adsorbed fluorines is a key for the formation of the SiF 2 species and their subsequent desorption.
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Spontaneous formation of vertically anticorrelated epitaxial islands on ultrathin substrates
TL;DR: In this paper, the authors demonstrate spontaneous formation of a vertically anticorrelated quantum dot growth on the top and bottom surfaces of an ultrathin substrate, which is due to the overlapping effect of the fringe elastic field modulated by the substrate thickness.
Journal ArticleDOI
Elastic behavior of a spherical inclusion with a given uniaxial dilatation
TL;DR: In this article, the elastic behavior of a spherical inclusion with a uniaxial dilatation is considered, and the relaxation mechanisms for the elastic field of the inclusion associated with the formation of prismatic dislocation loops are considered.
Journal ArticleDOI
Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)
Martin Schmidbauer,Zh. M. Wang,Yu. I. Mazur,P. M. Lytvyn,Gregory J. Salamo,D. Grigoriev,Peter Schäfer,Rolf Köhler,Michael Hanke +8 more
TL;DR: In this article, the self-organized formation of In0.40Ga0.60As quantum dot chains was investigated using x-ray scattering and two samples were compared grown on GaAs(100) by molecular beam epitaxy.