Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Journal ArticleDOI
FePt thin film irradiated with high energy ions
Miriam Jaafar,Ruy Sanz,Manuel Vázquez,Agustina Asenjo,Jens Jensen,Klas Hjort,Sybille Flohrer,Jeffrey McCord,Rudolf Schäfer +8 more
TL;DR: In this article, the changes in structural and magnetic properties of FePt thin films due to the irradiation with high energy ions (Br 7+ and Cl 2+ ) were studied.
Journal ArticleDOI
Compositional Redistribution in Coherent ${\rm Si}_{1\hbox{-}x}{\rm Ge}_{ x}$ Islands on Si(100)
TL;DR: In this paper, a coherent Si1-xGex island growth by molecular beam epitaxy is studied for a fixed growth temperature but for different Ge concentrations in the range 0.37 lesxles 0.56.
Book ChapterDOI
Strain and composition determination in semiconducting heterostructures by high-resolution X-ray diffraction
Claudio Ferrari,Claudio Bocchi +1 more
TL;DR: In this article, the basics of the method for measuring the strain and composition in two-dimensional structures by means of high-resolution x-ray diffraction techniques and laboratory X-ray sources are presented.
Journal ArticleDOI
Self‐Ordering of Ge Islands on Si Substrates Mediated by Local Strain Fields
TL;DR: In this paper, the authors have fabricated linear chains and two-dimensional arrays of Ge islands by self-assembling and self-ordering processes on vicinal Si substrates, where step bunches and stripe-like strain fields caused by underlying Si/SiGe multilayers with periodic wire-like accumulations at step edges induce an alignment of ge islands.
Journal ArticleDOI
Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111)
TL;DR: In this paper, the very initial stage of the molecular beam epitaxy of Si and Ge on Si(111)−7×7 substrates with atomically straight steps has been studied by scanning tunneling microscopy and spectroscopy.