Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Journal ArticleDOI
Strain assisted inter-diffusion in GaN/AlN quantum dots
Cédric Leclere,V. Fellmann,Catherine Bougerol,David Cooper,Bruno Gayral,Maria Grazia Proietti,Hubert Renevier,Bruno Daudin +7 more
TL;DR: In this article, the structural and optical properties of high temperature-annealed superlattices of GaN quantum dots embedded in AlN barrier have been studied by a combination of X-ray techniques (reciprocal space mapping, multiwavelength anomalous diffraction, and diffraction anomalous fine structure), high resolution transmission electron microscopy, and photoluminescence spectroscopy.
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The unexpected role of arsenic in driving the selective growth of InAs quantum dots on GaAs.
Fabrizio Arciprete,Ernesto Placidi,Rita Magri,Massimo Fanfoni,Adalberto Balzarotti,F. Patella +5 more
TL;DR: A kinetic model that explicitly takes into account the coupling between cations (In) and anions (As) is developed and found that the very small surface gradient in the anion flux is responsible for a massive drain of cations toward the surface anion-rich areas, thus generating the selective growth of quantum dots.
Journal ArticleDOI
ABAB organization of Ge∕Si(001) islands in multiplanes grown with low pressure chemical vapor deposition
TL;DR: In this paper, the role of the silicon spacer thickness on island organization is emphasized, and a dramatic transition in island self-organization is observed, where the island planes organize in a stable staggered (ABAB) vertical sequence, in which the island distribution is very reproducible.
Journal ArticleDOI
On the correlation between the self-organized island pattern and substrate elastic anisotropy
TL;DR: In this article, the authors show that the self-organized island pattern on the surface of an anisotropic substrate is closely correlated to the elastic energy distribution on the surfaces of the substrate.