Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Journal ArticleDOI
Wafer-Scale Control of Nanostructures on Si by Using Self-Organization Processes
Toshio Ogino,Yoshikazu Homma,Hiroki Hibino,Yoshihiro Kobayashi,Koji Sumitomo,K. Prabhakaran,Hiroo Omi +6 more
Journal ArticleDOI
Low-temperature carrier dynamics in MBE-grown InAs/GaAs single- and multi-layered quantum dots investigated via photoluminescence and terahertz time-domain spectroscopy
Alexander De Los Reyes,John Daniel Vasquez,Hannah Bardolaza,Lorenzo Lopez,Che-Yung Chang,Armando Somintac,Arnel Salvador,Der-Jun Jang,Elmer Estacio +8 more
TL;DR: In this article, the photocarrier dynamics in molecular beam epitaxy (MBE)-grown single- and multi-layered (MLQD) InAs/GaAs quantum dots were studied.
DissertationDOI
Development and application of a III-V surface electron microscope
TL;DR: In this paper, a surface electron microscope is developed to study the surface dynamics of III-V materials in real-time during MBE growth, which can be used to verify the Laplacian and caustic theories of MEM imaging.
Journal ArticleDOI
Epitaxial clusters studied by synchrotron X-ray diffraction and scanning tunneling microscopy
Mourits Nielsen,Robert Feidenhans'l,F. Berg Rasmussen,Jennifer L. Baker,Gerald Falkenberg,L. Lottermoser,Robert L. Johnson,A.J. Steinfort,P.M.L.O. Scholte +8 more
TL;DR: In this article, X-ray diffraction in combination with scanning tunneling microscopy can be used to determine the fundamental properties of such clusters, which can also be used for determining the structural properties of these clusters.
Journal ArticleDOI
Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots
TL;DR: In this article, the authors studied the stress field at the surface of GaAs capping layers of variable thicknesses burying InAs quantum dot arrays using the Finite Element method to solve numerically the equations of the elastic field.