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Journal ArticleDOI

Self-organization in growth of quantum dot superlattices.

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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

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Book ChapterDOI

Advances in Monte Carlo Simulations of Nanostructured Materials

TL;DR: In this article, the authors apply Monte Carlo simulations to the study of nanostructured materials, focusing on interfacial properties and processes related to strain, disorder, and alloying.

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES Study of the Transition of the Epitaxial Ge Film from LayertoLayer to ThreeDimensional Growth in Heterostructures with Strained SiGe Sublayers

TL;DR: In this paper, the authors studied the effect of SiGe layers on Ge film growth in different SiGe/Si(001) heterostructures with buried stressed layers and showed that deposition of a stressed planar SiGe layer results in a significant decrease in the critical thickness of two-dimensional Ge growth.
Journal ArticleDOI

Oblique Stacking of Three-Dimensional Dome Islands in Ge/Si Multilayers

TL;DR: In this article, cross-sectional transmission electron microscopy was used to investigate the organization of Ge "dome" islands in Ge/Si multilayers and found that they spontaneously arrange in oblique stacks, replicating at a well-defined angle from one bilayer to the next.
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