Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Journal ArticleDOI
Low-Density Quantum Dot Molecules by Selective Etching Using in Droplet as a Mask
Jihoon Lee,Zhiming Wang,Yusuke Hirono,Vitaliy G. Dorogan,Y.I. Mazur,Eun-Soo Kim,Sang-Mo Koo,Seunghyun Park,Sangmin Song,Gregory J. Salamo +9 more
TL;DR: In this article, low-density quantum dot molecules (QDMs) by selective etching using In droplets as a mask are demonstrated using InGaAs QDMs buried underneath GaAs capping layer.
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Growth and optical properties of Ge/Si quantum dots formed on patterned SiO2/Si(001) substrates
TL;DR: In this article, single and stacked layers of Ge/Si quantum dots were grown in SiO2 windows patterned by electron-beam lithography on oxidized Si (0 0 1) substrates, and the growth of a silicon buffer layer prior to Ge deposition was found to be an additional parameter for adjusting the Ge-dot nucleation process.
Journal ArticleDOI
Sb-modified growth of stacked Ge/Si(100) quantum dots
TL;DR: In this article, the Sb induced modifications of the morphology of self assembled Ge/Si(100) quantum dot stacks in a Si matrix grown by a molecular beam epitaxy were investigated.
Journal ArticleDOI
Facet-edge fluctuations with periphery diffusion kinetics
TL;DR: In this paper, the authors investigate the scaling of the steps bounding a facet surrounded by a rough region, and explore the crossover from unhindered to hindered fluctuations, calculating the growth exponent, β, with Monte Carlo simulation within the TSK model.
Journal ArticleDOI
Self organization of nitride quantum dots by molecular beam epitaxy
TL;DR: In this article, it has been shown that the dot size variation as a function of time obeys an Ostwald's ripening mechanism, which results in a better size homogeneity and a decrease in density.