scispace - formally typeset
Journal ArticleDOI

Self-organization in growth of quantum dot superlattices.

Reads0
Chats0
TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

read more

Citations
More filters
Journal ArticleDOI

Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

TL;DR: In this paper, the effect of thickness on the physical properties of ZnS films has been studied and the experimental results indicated that the thickness had a significant influence on the optical band gap as well as the luminescence intensity.
Journal ArticleDOI

A finite-element study of strain fields in vertically aligned InAs islands in GaAs

TL;DR: In this paper, a finite-element method was used to study strain fields in vertically aligned InAs islands in GaAs, and a kinetic approach based on the effect of strain on surface diffusion was proposed to predict local island nucleation probabilities.
Journal ArticleDOI

Multiscale modelling of nanostructures

TL;DR: This review covers the techniques that have been developed to model various aspects of materials behaviour with the ultimate aim of systematically coupling the atomistic to the continuum descriptions and concludes with an assessment of the current status of multiscale modelling strategies.
Journal ArticleDOI

Ge dots and nanostructures grown epitaxially on Si

TL;DR: In this article, an analytical electron transmission microscopy study of the Ge spatial distribution in Ge dots and Si /Si 1−xGex island superlattices grown by molecular beam epitaxy and ultra-high vacuum chemical vapour deposition is presented.
Related Papers (5)