Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Island chain formation during liquid phase epitaxy of SiGe on silicon
TL;DR: In this paper, the evolution of lateral ordering of SiGe nanoscale islands on Si(001), which have been grown by means of liquid phase epitaxy in the Stranski-Krastanow mode, is reported.
Journal ArticleDOI
Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments
TL;DR: In this article, a set of recent results concerning lateral and vertical ordering of Ge islands grown on Si(001) is reviewed and compared with computer simulations and modelling based on atomistic approaches and continuum theory, showing that the observed arrangement of small ge islands grown over the capping layer is very close to the one predicted by a simple model where the local chemical potential is inferred from the strain field at the atomic scale.
Journal ArticleDOI
Spatial ordering in InP/InGaP nanostructures
José Roberto Ribeiro Bortoleto,Humberto R. Gutierrez,Mônica A. Cotta,Jefferson Bettini,Lisandro Pavie Cardoso,M.M.G. de Carvalho +5 more
TL;DR: In this article, a spatially-ordered array of self-assembled InP quantum dots grown on slightly In-rich InGaP layers is observed along [100] and [010] directions.
Journal ArticleDOI
Photoluminescence of multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition at atmospheric pressure
Motlan,Ewa M. Goldys +1 more
TL;DR: In this article, photoluminescence from multilayer GaSb self-assembled quantum dots embedded in GaAs grown by metalorganic chemical vapor deposition was investigated and the spectra showed the emission from quantum dots at about 109 eV and from the wetting layer at 139 eV with increasing temperature.
Journal ArticleDOI
On three dimensional self-organization and optical properties of InAs quantum-dot multilayers
J. C. González,Franklin M. Matinaga,Wagner N. Rodrigues,M. V. B. Moreira,A. G. de Oliveira,M. I. N. da Silva,J. M. C. Vilela,Marília Santos Andrade,D. Ugarte,Petterson Costa Conceição Silva +9 more
TL;DR: In this paper, the authors report on experiments aimed at producing three-dimensional self-organization in InAs quantum-dot multilayers embedded in GaAs, which have been grown by molecular beam epitaxy.