Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Journal ArticleDOI
Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dots
TL;DR: In this article, the authors used atomic force microscopy and photoluminescence spectroscopy (PL) to study asymmetric bilayer InAs quantum dot (QD) structures grown by molecular-beam epitaxy on GaAs(001) substrates.
Journal ArticleDOI
Morphological transformation of InyGa1−yAs islands, fabricated by Stranski–Krastanov growth
TL;DR: In this article, a remarkable change in topology occurs when In y Ga 1− y As quantum dots, grown by Stranski-Krastanov self-organization, are covered by a thin layer of GaAs.
Book ChapterDOI
Chapter 3 - Metalorganic Vapor Phase Epitaxial Growth of Self-Assembled InGaAs/GaAs Quantum Dots Emitting at 1.3 μm
TL;DR: In this paper, the growth characteristics of alternate supply quantum dots are discussed, which are grown by an alternate supply of a monolayer or less with a sequence of indium arsenide gallium arsenides (InAsGaAs) and indium gallium arsenic arsenide (InGaAs).
Journal ArticleDOI
Self-assembled semiconductor nanostructures: Climbing up the ladder of order
Oliver G. Schmidt,Suwit Kiravittaya,Y. Nakamura,H. Heidemeyer,R. Songmuang,C. Müller,Neng Yun Jin-Phillipp,Karl Eberl,H. Wawra,Silke Christiansen,H. Gräbeldinger,Heinz Schweizer +11 more
TL;DR: In this paper, an InAs/GaAs quantum dot (QD) ensemble with a height distribution of ±5% and a final photoluminescence (PL) peak line width of 19 meV at room temperature was fabricated.
Journal ArticleDOI
Controlled surface nanopatterning with buried dislocation arrays
TL;DR: In this article, a periodic nanometre scale patterning can be induced at a silicon surface by buried dislocation networks obtained by twist wafer bonding, using stress selective etching of the surface.