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Self-organization in growth of quantum dot superlattices.

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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

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Journal ArticleDOI

Self-organized epitaxial growth of low-dimensional structures

TL;DR: In heteroepitaxy, misfit strain can lead to a variety of fascinating phenomena during growth as mentioned in this paper, such as self-organization of regular arrays of islands (quantum dots), step bunches (which may serve as a template for growth of "quantum wires" and compositionally modulated layers.
Journal ArticleDOI

X-ray diffraction and reflection from self-assembled Ge dots

TL;DR: In this paper, the structural properties of single and multiple layers of self-organised Ge islands grown on Si were studied and the X-ray reflection curves of the single layers indicate the transition from 2D to 3D growth for Ge layer thicknesses of 5.33-5.67 ML, in excellent agreement with photoluminescence observations.
Journal ArticleDOI

Shape of atomic steps on Si(111) under localized stress

TL;DR: In this paper, the Gibbs-Thomson effect was used to estimate the contribution of the strain-related contribution to the Gibbs free energy density of the Si(111) surface.
Journal ArticleDOI

Recent developments in Ge dots grown on pit-patterned surfaces

TL;DR: In this paper, the influence of the available patterning and growth parameters on the dots is analyzed and an overview of recent developments in device applications is given, e.g., concerned with analysing the impact of available patterns on the growth parameters of the dots.
Journal ArticleDOI

Thermodynamic Self-Limiting Growth of Heteroepitaxial Islands Induced by Nonlinear Elastic Effect.

TL;DR: It is shown that the NLEF induces a thermodynamic self-limiting growth mechanism that hinders the strain relaxation of coherent island beyond a maximum size, which is in contrast to indefinite strain relaxation with increasing island size in the linear elastic regime.
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