Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study
TL;DR: In this article, a 17-period In0.3Ga0.7As/GaAs multilayer structure with self-assembled quantum wires (QWRs) grown by the MBE and subjected to postgrowth rapid thermal annealing (RTA) at temperatures (Tann) from 550 to 850 °C for 30 s.
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Nanoparticles and the influence of interface elasticity
Mi Changwen,Demitris Kouris +1 more
TL;DR: In this article, the influence of surface and interface stress on the elastic field of a nanoparticle, embedded in a finite spherical substrate, is discussed, where an axially symmetric traction field acting along the outer boundary of the substrate and a non-shear uniform eigenstrain field inside the particle are considered.
Journal ArticleDOI
Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires
JM José Maria Ulloa,PM Paul Koenraad,David Fuster,Luisa González,Yolanda González,María Ujué González +5 more
TL;DR: Despite the different growth mechanism of the QWR between the first and following layers of the stack, theQWRs maintain on average the same shape and composition in all the layers ofthe stack, revealing the high stability of this QWR configuration.
Journal ArticleDOI
Arsenic dependence on the morphology of ultrathin GaAs layers on In0.53Ga0.47As∕InP(001)
TL;DR: In this article, the morphological evolution of thin GaAs films depends on the deposition and diffusion of group III adatoms and the incorporation of As from the vapor, in addition to Asaro-Tiller-Grinfeld instabilities.