Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Coupled technique to produce two-dimensional superlattices of nanoparticles
TL;DR: In this article, an original technique to produce high-quality monodisperse two-dimensional (2D) superlattices of nanoparticles is presented based on the diffusion of metal atoms deposited by pulsed-laser ablation technique into the first layer of a 3D-structured mesoporous silica film obtained by a sol-gel method.
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In-plane self-arrangement of high-density InAs quantum dots on GaAsSb/GaAs(001) by molecular beam epitaxy
Toru Kanto,Koichi Yamaguchi +1 more
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Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates
TL;DR: In this paper, the properties of SiGe nanostructures fabricated by applying self-assembling and self-ordering processes during molecular beam epitaxy on vicinal Si surfaces without any lithographic patterning were investigated.
Journal ArticleDOI
Control of InAs∕GaAs quantum dot density and alignment using modified buffer layers
TL;DR: In this article, the patterning effects of GaAs buffers during the growth of InAs∕GaAs quantum dot (QD) superlattices (SLs) were investigated.
Journal ArticleDOI
Nucleation and growth of self-assembled Ge/Si (001) quantum dots in single and stacked layers
TL;DR: In this paper, the authors combined in situ reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy and photoluminescence spectroscopy to analyze the Ge/Si growth process in single and stacked layers.