Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Journal ArticleDOI
Strain engineering, self-assembly, and nanoarchitectures in thin SiGe films on Si
TL;DR: In this article, a review of recent experimental results pertaining to self-assembly and self-ordering of quantum dots in semiconductor systems is presented, focusing on attempts to control the density, size, and size distributions of strained islands, both within a single strained layer and in quantum dot multilayers.
Journal ArticleDOI
One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)
TL;DR: In this paper, the authors show that when the substrate temperature during deposition is around 250°C, Ge nanoclusters of diameters less than 2.0nm form a one-dimensional array of the periodicity 2.7nm along each step, due to preferential nucleation of Ge on the unfaulted 7×7 half-unit cells at the upper step edges.
DissertationDOI
Growth simulations of InAs/GaAs quantum dots
TL;DR: In this article, a many-body potential of the Abell-Tersoff type was developed to account for the energetic balance of strain relief and QD side-facet formation during QD growth.
Journal ArticleDOI
Structural and morphological characterization of molecular beam epitaxy grown Si/Ge multilayer using x-ray scattering techniques
Manjula Sharma,Milan K. Sanyal,Mrinmay K. Mukhopadhyay,Mrinal K. Bera,Biswajit Saha,Purushottam Chakraborty +5 more
TL;DR: In this article, a method for the morphological and structural characterization of MBE grown epitaxial Si/Ge superlattice structures using simultaneous analysis of x-ray reflectivity and xray diffraction data was presented.
Journal ArticleDOI
Ge nanostructures grown by self-assembly; influence of substrate orientation
TL;DR: In this article, structural and optical properties of self-assembled random and non-random Ge dots on finite-area mesa substrates with facets with high-index orientation under conditions of strong surface diffusion were discussed.