Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Journal ArticleDOI
Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots
TL;DR: In this article, the influence of various growth parameters on the optical properties of self-assembled InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) in Stranski-Krastanov mode was investigated.
Journal ArticleDOI
Quantum dot solar cells
TL;DR: In this article, the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell has been investigated and the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy are presented.
Journal ArticleDOI
Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface
Oliver G. Schmidt,Neng Yun Jin-Phillipp,C. Lange,U. Denker,Karl Eberl,R. Schreiner,H. Gräbeldinger,Heinz Schweizer +7 more
TL;DR: In this article, self-assembled Ge islands are grown on top of a 15-period Si/SiGe superlattice, which is deposited on a prepatterned Si substrate.
Journal ArticleDOI
Mechanism of organization of three-dimensional islands in SiGe/Si multilayers
TL;DR: In this article, the organization of coherent three-dimensional islands during the growth of SiGe/Si multilayers on Si(100) was investigated with cross-sectional transmission electron microscopy.
Journal ArticleDOI
Self-assembled Ge/Si dots for faster field-effect transistors
Oliver G. Schmidt,Karl Eberl +1 more
TL;DR: In this article, the central unit of a dot-based field effect transistor (DotFET) is proposed to make up the core of a high-speed SiGe field-effect transistor.