Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Journal ArticleDOI
Precise control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells
TL;DR: In this paper, the Stranski-Krastanov growth on a cleaved edge of strained multiple quantum wells (SMQW) was used to control the position and the size of semiconductor islands.
Dissertation
Etude par spectroscopie X en condition de diffraction de la croissance et de l'encapsulation de boites quantiques GaN/AlN
TL;DR: In this paper, a mesure des structures fines en conditions de diffraction (spectroscopie X en condition of diffraction) and de la diffraction anomale, dans une geometrie en incidence rasante indispensable for l'etude de nanoobjets, a necessite des developpements experimentaux specifiques.
Book ChapterDOI
Chapter 16 Growth and Etching of Semiconductors
TL;DR: In this article, the basic mechanisms and atomistic processes that govern both growth and etching with a specific emphasis on the surfaces of semiconductors are reviewed with an attempt to find some overarching principles that can help us understand a number of what seem to be disparate unrelated phenomena.
Journal ArticleDOI
Spatially site-controlled InAs quantum dot lattices
TL;DR: In this article, a spatial site control method for InAs quantum dots (QDs) is proposed and demonstrated using ultrahigh vacuum in situ processing, where regular InAs QD arrays are initially prepared as strain templates on GaAs surfaces by the scanning tunneling microscope (STM) probe-assisted site-control technique.
Book ChapterDOI
Self-Assembly in Semiconductor Epitaxy: From Growth Mechanisms to Device Applications
TL;DR: In this article, the authors review the strain-driven self-assembly process during semiconductor epitaxy, looking at thermodynamic and kinetic factors that influence the growth as well as specific features of QDs in various materials systems.