Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Book ChapterDOI
GeSi/Si(001) Structures with Self-Assembled Islands: Growth and Optical Properties
N. V. Vostokov,Yu. N. Drozdov,D. N. Lobanov,A. V. Novikov,Mikhail Shaleev,A. N. Yablonskii,Z. F. Krasilnik,A. N. Ankudinov,M. S. Dunaevskii,A. N. Titkov,Petr M. Lytvyn,V. U. Yukhymchuk,M. Ya. Valakh +12 more
TL;DR: In this article, the growth and optical properties of single and multilayer structures with Ge(Si)/Si(001) self-assembled islands, grown at different Ge deposition temperatures (TGe), were investigated.
Journal ArticleDOI
Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy
TL;DR: In this article, the experimental results of RHEED and scanning tunneling microscopy investigations of multilayer structures of InGaAs/GaAs quantum dots, obtained by submonolayer epitaxy on singular and vicinal GaAS (100) substrates, are reported.
Journal ArticleDOI
Epitaxial self-alignment: A new route to hybrid active plasmonic nanostructures
Richard Nötzel,AJ Adam Urbanczyk +1 more
TL;DR: In this paper, the concept of lateral ordering of epitaxial semiconductor quantum dots (QDs) is for the first time transferred to hybrid nanostructures for active plasmonics.
Journal ArticleDOI
Lateral and vertical ordered one-dimensional InGaAs/GaAs quantum structures
TL;DR: In this paper, the InGaAs wires or dot chains sit on two-dimensional wetting layers and run along the [-110] direction, as the result of anisotropic strain and in-plane adatom diffusion.
Journal ArticleDOI
CVD grown silicon thin films with high carbon concentration : morphology and self-assembly controlled by surface segregation
TL;DR: In this article, an unusually high concentration of carbon atoms in crystalline silicon films grown by chemical vapor deposition (CVD) is reported, which is potentially useful in the fabrication of nanoscale modulations of carbon concentration profiles.