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Self-organization in growth of quantum dot superlattices.

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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

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Journal ArticleDOI

Narrow gap nano-dots growth by droplets heteroepitaxial mode

TL;DR: In this article, a detailed study on the growth mechanisms of the InSb-based droplets quantum dots and show the large versatility of this droplets growth system in achieving different optical properties of the dots system.
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Growth and electroluminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grown on silicon

TL;DR: In this paper, the growth and characterization of self-organized In0.4Ga0.6As/GaAs quantum dots on Si substrates were described, and the authors observed a blueshift towards smaller wavelengths with increasing current, suggesting the filling of smaller dots.
Journal ArticleDOI

Long wavelength stacking induced shift of the near-infrared photoluminescence from unintentional MOVPE grown InGaSb/GaSb quantum wells

TL;DR: In this paper, the effect of stacking on the near-infrared photoluminescence (NIR-PL) of InGaSb/GASb quantum wells (QWs) was investigated by means of scanning probe microscopy (SPM) which showed a significant deviation in the shape and density of dots grown directly on the buffer compared to those that terminated an embedded-dot sample.
Journal ArticleDOI

Quantitative strain analysis of GaN/AlN quantum dot multilayers

TL;DR: In this article, the strain distribution in vertically correlated GaN quantum dot layers embedded in an AlN matrix is investigated from high-resolution transmission electron microscopy images using the geometrical phase analysis.
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