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Self-organization in growth of quantum dot superlattices.

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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

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Journal ArticleDOI

Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures

TL;DR: In this article, high-energy electron diffraction and scanning tunnelling microscopy (STM) have been used to study InAs/GaAs quantum dot (QD) formation in bilayer QD structures grown by molecular beam epitaxy on GaAs(0.0.1) substrates.
Journal ArticleDOI

Structure and ordering of GaN quantum dot multilayers

Abstract: Grazing incidence x-ray techniques are used to characterize the structure of multilayered GaN quantum dots in an AlN matrix For a dot lateral size of 170 A, the values of the interdot vertical and lateral correlation lengths are 1500 and 250 A, respectively The presence of smaller quantum dots is observed only in the layers deposited first The strain distribution in the multilayer is also investigated as a function of depth Along the dot columns, the crystal lattice remains coherent, with elastic relaxation from the bottom to the top of the multilayer
Journal ArticleDOI

Strain-interactions between InAs/GaAs quantum dot layers

TL;DR: In this paper, the influence of the thickness of the spacer layer between the InAs/GaAs quantum dot bilayer and trilayer structures has been investigated using atomic force microscopy (AFM).
Journal ArticleDOI

Growth of undulating Si0.5Ge0.5 layers for photodetectors at λ=1.55 μm

TL;DR: Si0.5Ge 0.5/Si multiquantum-well structures were designed in order to obtain dislocation-free undulating strained layers used as the absorbing layers in photodetector structures.
Journal ArticleDOI

Computation of intersubband transition energy in normal and inverted core-shell quantum dots using finite difference technique

TL;DR: In this article, the transition energy of core-shell quantum dots of cubic and spherical geometries was computed by solving time-independent Schrodinger equation using finite-difference technique, and the results for the lowest three eigenstates and intersubband transitions were shown for different structural parameters taking GaAs/AlxGa1−xAs based CSQD as example.
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