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Self-organization in growth of quantum dot superlattices.

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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

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Journal ArticleDOI

Mechanism of stress relaxation in Ge nanocrystals embedded in SiO2

TL;DR: In this paper, a theoretical model that quantitatively describes the stress relief process is presented, which is governed by the diffusive flux of matrix atoms away from the local nanocrystal growth region.
Journal ArticleDOI

Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications.

Moritz Brehm, +1 more
- 08 Sep 2017 - 
TL;DR: It is proposed that the mandatory addressability of the light emitters can be achieved by a combination of organized QD growth assisted by templated self-assembly, and advanced inter-QD defect engineering to boost the optical emissivity of group-IV QDs at room-temperature.
Journal ArticleDOI

InGaAs quantum dots grown with GaP strain compensation layers

TL;DR: In this article, thin GaP layers are inserted below the quantum dot (QD) layer in single and stacked In 0.5Ga0.5As/GaAs QD structures.
Journal ArticleDOI

Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces

TL;DR: In this paper, the authors investigate the fundamental mechanism by which self-assembled Ge islands can be nucleated at specific sites on Si(001) using ultra-low-dose focused ion beam (FIB) pre-patterning.
Journal ArticleDOI

Self-organized lattice of ordered quantum dot molecules

TL;DR: In this article, ordered groups of InAs quantum dots (QDs) are created by self-organized anisotropic strain engineering of a (In,Ga)As/GaAs superlattice (SL) template on GaAs (311)B in molecular-beam epitaxy.
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