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Self-organization in growth of quantum dot superlattices.

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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Abstract
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.

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Journal ArticleDOI

Wafer-scale strain engineering on silicon for fabrication of ultimately controlled nanostructures

TL;DR: In this article, a method of strain distribution control on planar Si(001) and Si(111) wafers for nanostructure self-assembly is proposed, taking a long-term view toward future Si semiconductor science and technology.
Journal ArticleDOI

Formation process and ordering of self-assembled Ge islands

TL;DR: In this paper, the formation mechanisms and morphological features of Ge islands grown on Si(001) substrates using gas source molecular beam epitaxy (GSMBE) were studied.
Journal ArticleDOI

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

TL;DR: In this paper, a periodic organization appears in the QD plane for a high in-plane QD density (QDD), which enhances the lateral coupling between the dots, as evidenced by photoluminescence and magnetophotoluminecence experiments.
Journal ArticleDOI

UHV-CVD heteroepitaxial growth of Si1−xGex alloys on Si(100) using silane and germane

TL;DR: In this article, the growth rate and strain relaxation of Si 1− x Ge x layers grown on Si substrates by UHV-CVD were investigated, and the SiGe growth rate was found to exhibit two different behaviors as a function of growth temperature.
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