Journal ArticleDOI
Self-organization in growth of quantum dot superlattices.
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TLDR
The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.Abstract:
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.read more
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Spontaneous ordering of composition pattern in an epitaxial monolayer by subsurfacial dislocation array
TL;DR: In this article, a continuous phase field model is adopted to study the phase separation of a binary epilayer grown on the surface of a solid with subsurfacial dislocation array, and it is found that there exists interesting competition between the contributions to pattern formation from non-uniform surface stress and the buried dislocations.
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Uniformity enhancement of the self-organized InAs quantum dots
TL;DR: In this paper, the authors have observed that the peak position of photoluminescence is a function of interruption time, which can be used to modulate energy level of quantum dots.
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Dependence of surface strain on island geometry in embedded quantum-dot systems
TL;DR: In this article, the decay of the strain field on the spacer surface undergoes a crossover from a non-cubic inverse power law to a cubic inverse-power law with increasing spacer thickness.
Journal ArticleDOI
Effects of GaAs on Photoluminescence Properties of Self-Assembled InAs Quantum Dots
TL;DR: In this paper, the authors examined the strain tensor in InAs quantum dots by using a valence force field model and use a five-band kp formalism to obtain the electronic structure.
Journal ArticleDOI
Atomic force microscopy study of the growth and annealing of Ge islands on Si(100)
TL;DR: In this article, the growth and annealing of Ge islands on Si(100) by molecular beam epitaxy was investigated. But the growth was restricted to a low coverage of 6 ML of Ge, and the results showed that pyramids of higher aspect ratios only appeared at high growth temperatures or after a long time of annaling at low temperatures.