Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
Citations
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Journal ArticleDOI
Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Journal ArticleDOI
On-chip light sources for silicon photonics
TL;DR: Zhou et al. as discussed by the authors assess the three main contenders for on-chip light sources: erbium-based light sources, germanium-on-silicon lasers and III-V-based silicon lasers.
Book
Silicon Photonics Design: From Devices to Systems
TL;DR: In this article, the authors present the state-of-the-art in the field of fabless silicon photonic systems, including the following: 1.1 Optical Waveguide Mode Solver 2.2 Wave Propagation 2.3 Optoelectronic models 2.4 Microwave Modelling 2.5 Thermal Modeling 2.6 Photonic Circuit Modelling 3.7 Physical Layout 2.8 Software Tools Integration 3.4 Code Listings 4.5 Problems 4.7 Problems 5.4 Polarization 5.5 Problem 5.6 Code List
Journal ArticleDOI
Elastic strain engineering for ultralow mechanical dissipation
Amir H. Ghadimi,Sergey A. Fedorov,Nils J. Engelsen,Mohammad J. Bereyhi,Ryan Schilling,Dalziel J. Wilson,Tobias J. Kippenberg +6 more
TL;DR: It is shown how nanoscale stress can be used to realize exceptionally low mechanical dissipation when combined with “soft-clamping”—a form of phononic engineering.
Journal ArticleDOI
Elastic strain engineering for unprecedented materials properties
Ju Li,Zhi-Wei Shan,Evan Ma +2 more
TL;DR: In this article, the elastic strain field is controlled statically or dynamically by varying the six-dimensional elastic strain as continuous variables, which gives new meaning to Richard Feynman's 1959 statement, "There is plenty of room at the bottom".
References
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High-performance interconnects: an integration overview
R.H. Havemann,J.A. Hutchby +1 more
TL;DR: The Information Revolution and enabling era of silicon ultralarge-scale integration (ULSI) have spawned an ever-increasing level of functional integration on-chip, driving a need for greater circuit density and higher performance.
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Effect of static uniaxial stress on the Raman spectrum of silicon
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Journal ArticleDOI
Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
José R. Sánchez-Pérez,Cicek Boztug,Feng Chen,Faisal F. Sudradjat,Deborah M. Paskiewicz,RB Jacobson,Max G. Lagally,Roberto Paiella +7 more
TL;DR: It is demonstrated that mechanically stressed nanomembranes allow for the introduction of sufficient biaxial tensile strain to transform Ge into a direct-bandgap material with strongly enhanced light-emission efficiency, capable of supporting population inversion as required for providing optical gain.
Journal ArticleDOI
A micromachining-based technology for enhancing germanium light emission via tensile strain
Jinendra Raja Jain,Aaron C. Hryciw,Thomas M. Baer,David A. B. Miller,Mark L. Brongersma,Roger T. Howe +5 more
TL;DR: In this paper, a micromachining-based technology was employed to achieve significant enhancements in light emission from highly strained germanium-on-insulator samples, which was used to achieve a significant improvement in the light emission.
Journal ArticleDOI
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
Giovanni Isella,Daniel Chrastina,B. Rössner,Thomas Hackbarth,H.-J. Herzog,U. Konig,H. von Känel +6 more
TL;DR: In this paper, the potential of low-energy plasma-enhanced chemical vapor deposition (LEPECVD) for the fabrication of strained Si and Ge heterostructures and devices was reviewed.