Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
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Theoretical Modeling for the Interaction of Tin alloying with N-Type Doping and Tensile Strain for GeSn Lasers
TL;DR: In this paper, the effect of tin alloying on conduction band changes was investigated in the presence of tensile strain and n-type doping for improving the performance of a Ge-based laser.
Journal ArticleDOI
Uniaxial and tensile strained germanium nanomembranes in rolled-up geometry by polarized Raman scattering spectroscopy
Qinglei Guo,Miao Zhang,Zhongying Xue,Jing Zhang,Gang Wang,Da Chen,Mu Zhiqiang,Gaoshan Huang,Yongfeng Mei,Zengfeng Di,Xi Wang +10 more
TL;DR: In this paper, a rolled-up approach to form Ge microtubes and their array by rolling-up hybrid Ge/Cr nanomembranes is presented, which is driven by the built-in stress in the deposited Cr layer.
Journal ArticleDOI
Highly n-doped germanium-on-insulator microdisks with circular Bragg gratings.
TL;DR: GOI microdisk with circular Bragg grating is a promising optical resonator structure suitable for realizing low threshold, compact Ge lasers integrated on Si substrate, and its surface emission intensity is found to be increased by the grating period.
Journal ArticleDOI
Determining the directional strain shift coefficients for tensile Ge: A combined x-ray diffraction and Raman spectroscopy study
Tanja Etzelstorfer,Andreas Wyss,Martin J. Süess,Franziska F. Schlich,R. Geiger,Jacopo Frigerio,Julian Stangl +6 more
TL;DR: In this article, the calibration of the directional Raman strain shift coefficient for tensile strained Ge microstructures is reported, and the results are used to fit the phonon deformation potentials.
Journal ArticleDOI
Theoretical Modeling for the Interaction of Tin Alloying With N-Type Doping and Tensile Strain for GeSn Lasers
TL;DR: In this paper, the effect of tin alloying on conduction band changes was investigated in the presence of tensile strain and n-type doping for improving the performance of a Ge-based laser.
References
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Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
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High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
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Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
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Nonlinear silicon photonics
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.