Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
Citations
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Journal ArticleDOI
Design and analysis of a CMOS-compatible distributed Bragg reflector laser based on highly uniaxial tensile stressed germanium.
TL;DR: A CMOS-compatible Distributed Bragg Reflector (DBR) laser based on highly uniaxial tensile stressed germanium offers a new approach to realize on-chip light source for silicon photonics.
Journal ArticleDOI
Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth
Peter Zaumseil,Yuji Yamamoto,M. A. Schubert,Giovanni Capellini,Oliver Skibitzki,M. H. Zoellner,Thomas Schroeder +6 more
TL;DR: This method leads to Ge nanostructures on Si that are free from misfit dislocations and other structural defects, which is not the case for direct Ge deposition on these pillar structures.
Proceedings ArticleDOI
Spin transport and spin-charge interconversion phenomena in Ge-based structures
TL;DR: In this article, an analytical and a numerical spin drift-diffusion model is proposed to estimate the total spin transferred from the semiconductor to the heavy-metal layer. But the model is not suitable for the case of a single-input single-output (SISO) system.
Journal ArticleDOI
Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low‐temperature MBE‐grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations
TL;DR: In this article , an explanation for some peculiar features of Raman spectra is presented, which makes it possible to control the quality of the grown heterostructures more effectively, and the anomalous behavior of the Raman Spectra with the change of thickness of deposited Ge is connected with the flatness of Ge layers as well as transitional SiGe domains formed via the stress-induced diffusion from 105 facets of quantum dots.
Proceedings ArticleDOI
Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si
Nils von den Driesch,Daniela Stange,Stephan Wirths,Denis Rainko,Gregor Mussler,Toma Stoica,Zoran Ikonic,Jean-Michel Hartmann,Detlev Grützmacher,Siegfried Mantl,Dan Buca +10 more
TL;DR: In this article, the authors presented electroluminescence studies of reduced-pressure CVD grown, direct bandgap GeSn light emitting diodes (LEDs) with Sn contents up to 11 at.%.
References
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Journal ArticleDOI
Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI
High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
Journal ArticleDOI
Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Journal ArticleDOI
Nonlinear silicon photonics
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.