Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
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Journal ArticleDOI
Optical properties of an ensemble of G-centers in silicon
Clément Beaufils,Walid Redjem,Emmanuel Rousseau,Vincent Jacques,A. Yu. Kuznetsov,Christophe Raynaud,Christophe Voisin,A. Benali,T. Herzig,Sébastien Pezzagna,Jan Meijer,Marco Abbarchi,Guillaume Cassabois +12 more
TL;DR: In this article, the carrier dynamics in G-centers in silicon have been investigated by using time-resolved photoluminescence spectroscopy, and the authors obtained an estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the electronic wave function in the G-center.
Journal ArticleDOI
Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si
Martyna Grydlik,Florian Hackl,Heiko Groiss,Martin Glaser,Alma Halilovic,Thomas Fromherz,Wolfgang Jantsch,Friedrich Schäffler,Moritz Brehm +8 more
TL;DR: In this paper, epitaxially grown Ge quantum dots (QDs) in a fully coherent Si matrix show extraordinary optical properties if partially amorphised by Ge-ion bombardment (GIB).
Journal ArticleDOI
Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators
Javier Martín-Sánchez,Rinaldo Trotta,Antonio Joaquín Franco Mariscal,Rosalía Serna,Giovanni Piredda,Sandra Stroj,Johannes Edlinger,Christian Schimpf,Johannes Aberl,Thomas Lettner,Johannes S. Wildmann,Huiying Huang,Xueyong Yuan,Dorian Ziss,Julian Stangl,Armando Rastelli +15 more
TL;DR: In this article, the authors mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures.
Journal ArticleDOI
Germanium based photonic components toward a full silicon/germanium photonic platform
Vincent Reboud,Alban Gassenq,J.M. Hartmann,Julie Widiez,Léopold Virot,J. Aubin,Kevin Guilloy,Samuel Tardif,Jean-Marc Fedeli,Nicolas Pauc,Alexei Chelnokov,Vincent Calvo +11 more
TL;DR: In this paper, the authors show that optical germanium-on-insulator (GeOI) substrates fabricated by the Smart Cut™ technology is a key feature for future Si-complementary metal oxide Semiconductor (CMOS) compatible laser demonstration.
Journal ArticleDOI
Hydrogen Terminated Germanene for a Robust Self-Powered Flexible Photoelectrochemical Photodetector.
Nana Liu,Hui Qiao,Kang Xu,Yilian Xi,Long Ren,Long Ren,Ningyan Cheng,Dandan Cui,Xiang Qi,Xun Xu,Xun Xu,Weichang Hao,Shi Xue Dou,Shi Xue Dou,Yi Du,Yi Du +15 more
TL;DR: It is revealed that the hydrogen terminated germanenes not only maintains a high carrier mobility similar to that of germanene, but also exhibits strong light-matter interaction with a direct band gap, exhibiting great potential for photoelectronics.
References
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Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
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High-performance Ge-on-Si photodetectors
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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.