Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
Citations
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Journal ArticleDOI
Enhanced room-temperature electroluminescence from a germanium waveguide on a silicon-on-insulator diode with a silicon nitride stressor.
TL;DR: In this article, a SiNx stressor was applied to a silicon-on-insulator (SOI) diode to a Ge waveguide for direct-band-gap electroluminescence.
Journal ArticleDOI
Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density
Yong-Joo Jung,Daniel Burt,Ling Zhang,Youngmin Kim,Hyo-Jun Joo,Melvina Chen,Simone Assali,Oussama Moutanabbir,Chuan Seng Tan,Donguk Nam +9 more
TL;DR: In this article , the effect of defects on the lasing threshold of low-threshold GeSn infrared laser has been investigated, and a method of obtaining high-quality GeSn-on-insulator layers using low-temperature direct bonding and chemical-mechanical polishing is presented.
Patent
Method for producing a semiconductor structure comprising a stressed portion
TL;DR: In this article, a method for making a semiconductor structure comprising a constraint portion (40) and integral with a support layer (30) by molecular bonding, comprising the steps of a cavity is carried out (21) located in a structured part (11) so as to force a central portion ( 40) of the side portions (50) and a contacting and molecular bonding of the structured part with a supporting layer, the method being characterized by effecting a consolidation annealing.
Journal ArticleDOI
Si photonic waveguides with broken symmetries: applications from modulators to quantum simulations
Shinichi Saito,Isao Tomita,Moïse Sotto,Kapil Debnath,Kapil Debnath,James Byers,Abdelrahman Al-Attili,Daniel Burt,Muhammad Husain,Hideo Arimoto,Kouta Ibukuro,Martin D. B. Charlton,David J. Thomson,Weiwei Zhang,Bigeng Chen,Frederic Y. Gardes,Graham T. Reed,Harvey N. Rutt +17 more
TL;DR: In this article, the symmetries of waveguides determine fundamental properties of photons such as mode profiles, polarisation, and effective refractive indexes as well as practical properties affecting the propagation loss.
Proceedings ArticleDOI
GeSn for nanoelectronic and optical applications
Dan Buca,Stephan Wirths,Daniela Stange,Nils von den Driesch,Toma Stoica,Detlev Grützmacher,S. Mantl,Zoran Ikonic,J.M. Hartmann +8 more
TL;DR: In this paper, the growth and material properties of GeSn alloys and their application possibilities in photonic and nanoelectronic devices are discussed, and the list of group IV semiconductors is being extended beyond Ge to the semimetal Sn.
References
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Journal ArticleDOI
Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI
High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
Journal ArticleDOI
Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Journal ArticleDOI
Nonlinear silicon photonics
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.