Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
Citations
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Journal ArticleDOI
Strain and lattice orientation distribution in SiN/Ge complementary metal–oxide–semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy
Gilbert André Chahine,M. H. Zoellner,Marie-Ingrid Richard,Subhajit Guha,C Reich,Peter Zaumseil,Giovanni Capellini,Thomas Schroeder,T.U. Schülli +8 more
TL;DR: In this article, the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high-resolution x-ray micro-diffraction was studied.
Journal ArticleDOI
1D photonic crystal direct bandgap GeSn-on-insulator laser
Hyo-Jun Joo,Youngmin Kim,Daniel Burt,Yongduck Jung,Lin Zhang,Melvina Chen,Samuel Jior Parluhutan,Dong-Ho Kang,Chulwon Lee,Simone Assali,Zoran Ikonic,Oussama Moutanabbir,Yong-Hoon Cho,Chuan Seng Tan,Donguk Nam +14 more
TL;DR: In this article, the authors presented a 1D photonic crystal nanobeam with a very small device footprint of 7 μm2 and a compact active area of ∼1.2 μm.
Journal ArticleDOI
Tensile-strained germanium microdisks with circular Bragg reflectors
M. El Kurdi,Mathias Prost,A. Ghrib,Anas Elbaz,Sébastien Sauvage,Xavier Checoury,Grégoire Beaudoin,Isabelle Sagnes,Gennaro Picardi,Razvigor Ossikovski,Frederic Boeuf,Philippe Boucaud +11 more
TL;DR: In this article, a combination of germanium microdisks tensily strained by silicon nitride layers and circular Bragg reflectors is demonstrated for achieving a microlaser with a quasi-direct band gap for a 1.6% biaxial tensile strain.
Journal ArticleDOI
Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers
TL;DR: In this article, the optical properties of photo-excited biaxially strained intrinsic and n-type doped Ge semi-infinite layers using a multi-valley effective mass model were investigated.
Journal ArticleDOI
Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band.
Shengqiang Xu,Kaizhen Han,Yi-Chiau Huang,Kwang Hong Lee,Yuye Kang,Saeid Masudy-Panah,Ying Wu,Dian Lei,Yunshan Zhao,Hong Wang,Chuan Seng Tan,Xiao Gong,Yee-Chia Yeo +12 more
TL;DR: In this work, as prototype demonstration, both Ge p- and n-channel fin field-effect transistors (FinFETs) were realized on GeOI simultaneously with decent static electrical characteristics.
References
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Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
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High-performance Ge-on-Si photodetectors
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Electrically pumped hybrid AlGaInAs-silicon evanescent laser
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Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.