Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
Citations
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DissertationDOI
Numerical investigation of efficiency loss mechanisms in light emitting diodes and determination of radiative and non-radiative lifetimes for infrared optoelectronics
TL;DR: In this paper, the optical properties of germanium and Germanium-tin alloy have been determined through a novel numerical approach that applies a Green's function based model to the full band structure of the material.
Journal ArticleDOI
Enhanced light emission from germanium microdisks on silicon by surface passivation through thermal oxidation
TL;DR: In this article, the authors observed enhanced direct-gap light emission from undoped and n-doped germanium microdisks on silicon, attributed mainly to increased carrier density due to surface passivation of the dry-etched sidewall.
Proceedings ArticleDOI
Carrier lifetimes in uniaxially strained Ge micro bridges
R. Geiger,Martin J. Süess,Christopher Bonzon,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +8 more
TL;DR: In this article, the performance of strained Ge bridges is compared with unprocessed layers in terms of their nonradiative recombination time, and the lifetime for the strained microstructures does not decrease.
Journal ArticleDOI
Tight-binding simulation of silicon and germanium nanocrystals
TL;DR: In this paper, a review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method and the results obtained with the use of this method are presented.
Journal ArticleDOI
Localized thinning for strain concentration in suspended germanium membranes and optical method for precise thickness measurement
Pablo O. Vaccaro,Maria Isabel Alonso,Miquel Garriga,Joffre Gutiérrez,Joffre Gutiérrez,D. Peró,Markus R. Wagner,Juan Sebastián Reparaz,C. M. Sotomayor Torres,Xavier Vidal,Elizabeth A. Carter,Peter A. Lay,Masahiro Yoshimoto,Alejandro R. Goñi +13 more
TL;DR: In this article, the authors demonstrate a CMOS-compatible fabrication strategy to increase strain concentration and to eliminate the Ge buffer layer near the Ge/Si hetero-interface deposited at low temperature.
References
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Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI
High-performance Ge-on-Si photodetectors
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Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Journal ArticleDOI
Nonlinear silicon photonics
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.