Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
Citations
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Journal ArticleDOI
Exploring defect behavior and size effects in micron-scale germanium from cryogenic to elevated temperatures
Proceedings ArticleDOI
Strained Ge nanowire with high-Q optical cavity for Ge laser applications
Donguk Nam,Jan Petykiewicz,David S. Sukhdeo,Shashank Gupta,Sonia Buckley,Jelena Vuckovic,Krishna C. Saraswat +6 more
TL;DR: In this article, the authors present a Si-compatible laser structure that simultaneously achieves high tensile strain, pseudo-heterostructure, and high-Q optical cavity in a pure Ge layer.
Temperature-dependent photoluminescence in light-emitting
Ziguang Ma,Yutao Fang,Haiyan Wu,Yang Jiang,Lu Wang,Longgui Dai,Haiqiang Jia,Wu-Ming Liu,Hong Chen +8 more
Journal ArticleDOI
Long-lasting deformation potential effect in Ge induced by UV photoexcitation
TL;DR: In this paper , the authors investigated the deformation potential (DP) effect of an archetypal semiconductor crystal upon photoexcitation at two pump wavelengths, 800 nm and 400 nm, using time-resolved x-ray diffraction (TXRD).
References
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Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI
High-performance Ge-on-Si photodetectors
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Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Journal ArticleDOI
Nonlinear silicon photonics
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.