Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
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Proceedings ArticleDOI
Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform
Bongkwon Son,Yiding Lin,Wei Li,Kwang Hong Lee,Joe Margetis,David Kohen,John Tolle,Lin Zhang,Tina Guo Xin,Hong Wang,Chuan Seng Tan +10 more
TL;DR: In this article, metal-semiconductor-metal photodetectors (MSM PDs) on a GeSn-on-insulator (GeSnOI) platform were demonstrated.
Proceedings ArticleDOI
Design and characterization of Ge passive waveguide components on Ge-on-insulator for mid-infrared photonics
TL;DR: It is revealed the thermo-optic coefficient in Ge strip waveguide is 6×10-4/°C, greater than in Si.
Journal ArticleDOI
Effects of post annealing on in-situ n-doped Ge-on-Si
Group IV epitaxy for advanced nano- and optoelectronic applications
TL;DR: A low temperature reduced pressure chemical vapour process using commercially available Geand Sn-precursors, namely Ge2H6 and SnCl4, is developed for the growth of GeSn and SiGeSn epilayers directly on Si(1) and on Ge-buffered Si(2).
Posted Content
Interdiffusion in Group IV Semiconductor Material Systems: Applications, Research Methods and Discoveries
TL;DR: Si-Ge interdiffusion behaviors have not been well understood until recent years as discussed by the authors, and only very few studies are available for Si-Ge and GeSn interdiffusions.
References
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Journal ArticleDOI
Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI
High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
Journal ArticleDOI
Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Journal ArticleDOI
Nonlinear silicon photonics
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.